LED Reflective Stacked Layer Design for Migration Resistance
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Solution Overview
Problem
The packaging structure of light-emitting diodes (LEDs) with reflective layers is prone to issues such as migration, peeling, and corrosion due to ambient vapor and temperature exposure, affecting light output intensity and uniformity.
Innovation Solution
A light-emitting diode structure utilizing two reflective layers made from different materials, where the second reflective layer has a greater vertical projection area and better resistance to migration, forming a stacked reflective surface that protects the first reflective layer without reducing light output intensity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If a reflective layer is disposed in the packaging structure to reflect light and increase light output intensity in one direction, then light output intensity is improved, but the reflective layer is affected by ambient vapor, temperature, and acid causing migration, peeling, and corrosion
Solution Approach 1:
The patent applies composite materials by combining multiple reflective layers with different materials (e.g., aluminum layer and silver layer) to create a multi-layer reflective structure. Each layer compensates for the weaknesses of the other, with the aluminum layer providing structural stability and resistance to migration, while the silver layer provides high reflectance. This composite structure resolves the contradiction by maintaining both high light output intensity and reliability under ambient conditions.
Solution Approach 2:
The patent implements the nested doll principle by disposing multiple reflective layers in a stacked configuration where one reflective layer is positioned over another. The layers are nested vertically with each layer having a projection area that overlaps with the layer below it. This nested structure allows the lower layers to provide structural support and protection while upper layers contribute to light reflection, thereby improving both light output intensity and resistance to environmental degradation.
2Illumination intensity
If the reflective layer area is increased to improve light output intensity, then light output intensity is improved, but the device complexity and susceptibility to environmental damage increase
Solution Approach 1:
The patent applies dimensionality change by transitioning from a single-plane reflective layer to a multi-layer vertical stacking configuration. Instead of simply expanding the area of a single reflective layer in two dimensions, the invention adds a vertical dimension by stacking multiple reflective layers with different projection areas. This approach increases the effective reflective surface area and light output intensity while distributing the structural complexity across multiple thin layers rather than requiring a single large complex structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The configuration enhances the reliability and light output intensity of the LED by increasing the reflective surface area and improving resistance to migration and corrosion, maintaining high reflectance and light output performance.
Implementation Method 1
a reflective stacked layer includes a first reflective layer and a second reflective layer... forming a reflective surface of the light emitting diode structure, thereby increasing the area of the reflective surface
Data Source
AI summary
A light emitting diode structure includes a first type semiconductor layer, a second type semiconductor layer, an active layer disposed therebetween, and a reflective stacked layer. The reflective stacked layer includes a first reflective layer and a second reflective layer. The first reflective layer is disposed at a side of the second type semiconductor layer opposing the active layer. The second reflective layer is disposed at a side of the first reflective layer opposing the second type semiconductor layer, and extends along a side surface of the first reflective layer to a surface of the second type semiconductor layer. A vertical projection area of the second reflective layer on the second-type semiconductor layer is greater than that of the first reflective layer thereon. The second reflective layer has a better resistance to migration than the first reflective layer.