Semiconductor Light Emitting Element Electrode Design for Uniform Emission
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Solution Overview
Problem
Conventional semiconductor light emitting elements suffer from emission unevenness due to current accumulation and uneven light distribution, resulting in non-uniform brightness across the emission area.
Innovation Solution
A semiconductor light emitting element design featuring n-side and p-side electrodes with specific extensions, where the n-side electrode has a T-shaped second extension and the p-side electrode forms a C-shaped extension surrounding the n-side electrode, with the n-side second extension being longer than the p-side pad electrode diameter, and the p-side extension having a third extension towards the n-side first extension, to enhance current distribution and reduce emission unevenness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If a slender p-side electrode is extended linearly from a p pad electrode, then the emission unevenness is reduced, but current accumulates at the extension portion causing non-uniform current distribution
Solution Approach 1:
The p-side electrode is divided into multiple segments: a p pad electrode, a p-side extension with first and second extensions, and a p-side surrounding extension. This segmentation distributes the current flow paths, preventing accumulation at any single location while maintaining extended emission coverage.
Solution Approach 2:
The electrode design transitions from a simple linear extension to a multi-dimensional configuration with the p-side surrounding extension that extends in multiple directions (first extension in one direction, second extension in another direction). This dimensional expansion creates additional current distribution pathways that eliminate accumulation points.
2Illumination intensity
If linear p-side electrodes are alternated with n-side electrodes extending from pad electrodes, then emission unevenness is further reduced, but the end part of the electrode is separated by considerable distance from the pad causing lower output at that portion
Solution Approach 1:
The n-side electrode is segmented into an n pad electrode, an n-side extension with first and second extensions, creating multiple active regions. The first extension connects to the light emitting layer, and the second extension further extends to create additional emission zones, ensuring uniform power distribution across the electrode structure.
Solution Approach 2:
The p-side electrode and n-side electrode are merged in a coordinated alternating pattern where the p-side surrounding extension and n-side extension work together. This merging creates a balanced structure where both electrode types contribute equally to emission, preventing output imbalance between electrode ends and pads.
3Device complexity
If current is supplied to only one p pad electrode, then the electrode structure is simplified, but there is a difference in brightness between emission from the p pad electrode and n pad electrode, and emission from the n pad electrode and other electrodes
Solution Approach 1:
The electrode design implements local quality variations with the p-side surrounding extension that specifically targets regions near the n pad electrode. The first extension provides coverage in one local area while the second extension provides coverage in another local area, creating locally optimized current distribution that balances brightness across different electrode regions.
Solution Approach 2:
The p-side electrode structure is designed asymmetrically with the p pad electrode positioned at one location and the p-side surrounding extension configured to extend in specific directions (first extension and second extension in different orientations). This asymmetric design compensates for the single current supply point by creating non-uniform current distribution patterns that balance the overall brightness across symmetric regions of the device.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design significantly reduces emission unevenness and voltage fluctuation (Vf), achieving a more uniform light emission and improved brightness across the emission area.
Implementation Method 1
a semiconductor layer where an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer are laminated
Data Source
AI summary
The present invention provides a semiconductor light emitting element having; a semiconductor layer where an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer are laminated; an n-side electrode connected to the n-type semiconductor layer; and a p-side electrode connected to the p-type semiconductor layer; when the semiconductor light emitting element is viewed from above, the n-side electrode has a n-side pad electrode and n-side extension, the n-side extension comprises an n-side first extension extending from the n-side pad electrode toward the p-side pad electrode and an n-side second extension extending from the n-side first extension and formed T shape with the n-side first extension, the p-side electrode has a p-side pad electrode and a p-side extension formed so as to surround the n-side electrode, the p-side side extension comprises an p-side first extension extending from the p-side pad electrode parallel to the n-side second extension.