Semiconductor Device Dummy Trench Branching for Low ON Voltage
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Solution Overview
Problem
Conventional semiconductor devices face challenges in enhancing the Carrier Injection Enhanced (IE) effect to lower the ON voltage, as existing trench gate configurations are limited in effectively increasing the IE effect.
Innovation Solution
The semiconductor device incorporates a dummy trench portion with branch portions on a semiconductor substrate, which penetrates the emitter and base regions, and includes a dummy insulating portion within the trench to enhance the IE effect by increasing the trench area and suppressing hole passage, thereby lowering the ON voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If conventional trench gate configurations are used, then the device structure is simple, but the Carrier Injection Enhanced (IE) effect is insufficient and ON voltage cannot be lowered
Solution Approach 1:
The dummy trench portion is divided into a main body portion and multiple branch portions extending in different directions. This segmentation increases the total trench area and creates multiple interfaces with the emitter and base regions, thereby enhancing the Carrier Injection Enhanced effect and lowering the ON voltage.
Solution Approach 2:
The dummy trench portion extends not only in the primary direction but also includes branch portions extending in directions different from the extending direction of the main body portion. This multi-dimensional configuration increases the trench area and improves the IE effect without simply increasing the linear dimensions.
2Power
If the trench area is increased to enhance the IE effect, then the ON voltage is lowered, but the device area increases and miniaturization is limited
Solution Approach 1:
By segmenting the dummy trench into a main body and multiple branches, the configuration achieves a large effective trench area within a compact footprint. The branch portions utilize vertical space efficiently, increasing the trench area without proportionally increasing the planar device area.
Solution Approach 2:
The branch portions extend in directions different from the main body portion, utilizing three-dimensional space rather than simply expanding in the planar direction. This allows the trench area to be increased while maintaining a compact device footprint and enabling miniaturization.
3Power
If dummy trench portions are added to enhance the IE effect, then the ON voltage is lowered, but the device complexity and manufacturing difficulty increase
Solution Approach 1:
The dummy trench portion with its main body and branch portions is formed as an integrated structure using standard semiconductor fabrication processes. By combining the formation of the main body and branches into a single trench formation step, the manufacturing complexity is minimized while achieving the desired IE effect enhancement.
Solution Approach 2:
The dummy trench portion serves multiple functions: it enhances the Carrier Injection Enhanced effect, provides a reference structure for alignment, and can be integrated with existing trench gate structures. This multi-functionality reduces the need for additional separate structures and simplifies the overall manufacturing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The configuration effectively heightens the IE effect, leading to a reduced ON voltage and improved contact resistance between the emitter electrode and the emitter region, while maintaining reliability and allowing for device miniaturization.
Implementation Method 1
By providing the dummy gate, a carrier Injection Enhanced effect (IE effect) is generated
Data Source
AI summary
A semiconductor device is provided comprising a semiconductor substrate of a first conductivity type and a dummy trench portion having a main body portion and one or more branch portions, the main body portion formed in a front surface of the semiconductor substrate and extending in a predetermined extending direction, the branch portions extending from the main body portion in directions different from the extending direction. The semiconductor substrate has an emitter region of first conductivity type and a base region of a second conductivity type which are provided sequentially from the front surface side of the semiconductor substrate, and the dummy trench portion has a dummy trench which penetrates the emitter region and the base region from the front surface of the semiconductor substrate, and a dummy insulating portion which is provided within the dummy trench.