Semiconductor Device Inverse Taper Angles Threshold Voltage
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Solution Overview
Problem
Current semiconductor devices using nitride semiconductors face challenges in achieving improved characteristics such as high threshold voltage and low on-resistance, which are essential for efficient operation.
Innovation Solution
The semiconductor device incorporates a specific structure with Alx1Ga1-x1N and Alx2Ga1-x2N semiconductor regions, along with insulating regions and electrodes, where the angles between the semiconductor and insulating regions are carefully designed to be less than 90 degrees, creating an inverse taper that enhances the effective channel length and carrier region formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional semiconductor structures are used, then manufacturing is simpler, but threshold voltage and on-resistance characteristics are insufficient
Solution Approach 1:
The semiconductor structure is divided into multiple distinct regions with different Al composition ratios (first semiconductor region with x1, second semiconductor region with x2, third semiconductor region with x3), where each segment serves a specific functional purpose in controlling threshold voltage and on-resistance characteristics
Solution Approach 2:
Different regions of the semiconductor structure are assigned different material compositions and geometric properties (inverse taper angles α1, α2, α3) to optimize local electrical characteristics, with the Al composition ratio and taper angle varying spatially to achieve desired threshold voltage and on-resistance
2Reliability
If the semiconductor structure is optimized for high threshold voltage and low on-resistance, then device performance improves, but manufacturing complexity increases
Solution Approach 1:
The invention optimizes specific parameters including Al composition ratios (x1, x2, x3), inverse taper angles (α1, α2, α3), and layer thicknesses to achieve high threshold voltage and low on-resistance, where these parameters are carefully controlled during the manufacturing process to balance performance with manufacturability
Data Source
AI summary
According to one embodiment, a semiconductor device includes first, second, and third electrodes, a semiconductor member, and a first insulating member. The semiconductor member includes a first face and a first side face. A third insulating region is between the first face and the third electrode in a second direction. A first insulating region is between the first side face and the third electrode in a first direction. The first side face includes first and second side face portions. The first side face portion is between the first face and the second side face portion in the second direction. At least a first angle between a first plane including the first face and the first side face portion and a second angle between the first plane and the second side face portion is less than 90 degrees. The second angle is different from the first angle.