Lateral Semiconductor Devices With Permanent Charge Insulation

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

Conventional lateral power semiconductor devices face challenges in achieving low specific on-resistance and capacitances while maintaining high breakdown voltage, which is essential for emerging applications.

Innovation Solution

Incorporating permanent charges into the insulation regions of lateral semiconductor devices, specifically at the semiconductor/insulator interface, to balance charges and create a more uniform electric field, thereby enhancing breakdown voltage and reducing on-resistance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional lateral power semiconductor device structures are used, then fabrication is simpler, but breakdown voltage is insufficient and specific on-resistance is high

Engineering Contradiction:

Improvebreakdown voltageVSAvoidfabrication complexity

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

Permanent charges are implanted into the insulation region before final device operation, pre-establishing the electric field distribution needed for high breakdown voltage. This preliminary charge placement eliminates the need for complex post-fabrication field adjustment while achieving superior electrical characteristics

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The invention changes the electrical parameter of the insulation region by introducing permanent charges, transforming it from a neutral dielectric layer to an actively charge-balanced region. This parameter change enables the insulation region to contribute to breakdown voltage enhancement without increasing structural complexity

Inventive Principle:

Principle #35Parameter changes

2Ease of manufacture

If insulation regions without permanent charge are used, then fabrication is simpler, but specific on-resistance and capacitances are not optimized

Engineering Contradiction:

Improvefabrication simplicityVSAvoidspecific on-resistance

Core Design Contradiction:

Ease of manufactureVSManufacturing precision

Solution Approach 1:

Permanent charges are implanted into the insulation region during fabrication, pre-establishing the electric field distribution needed for high breakdown voltage. This preliminary charge placement eliminates the need for complex post-fabrication field adjustment while achieving superior electrical characteristics

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The use of permanent charges in the insulation regions allows for higher breakdown voltage, lower capacitances, and simpler fabrication, while reducing the specific on-resistance of the devices, making them more suitable for high-voltage applications.

Implementation Method 1

Permanent charges are embedded in the insulation region, or the semiconductor/insulator interface, sufficient to cause inversion in the insulation region

Methodology Applied

Scientific EffectPermanent charge: Electrostatics

Implementation Method 2

to balance charges and create a more uniform electric field, thereby enhancing breakdown voltage

Methodology Applied

Scientific EffectElectric field: Electric Field

Data Source

PatentUS8330186B2Lateral devices containing permanent charge

Publication Date: 2012.12.11 MAXPOWER SEMICONDUCTOR INC

AI summary

A lateral device includes a gate region connected to a drain region by a drift layer. An insulation region adjoins the drift layer between the gate region and the drain region. Permanent charges are embedded in the insulation region, sufficient to cause inversion in the insulation region.