Layered Electrode Pillars for Higher-Capacity DRAM Capacitors
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional columnar single-sided capacitors in miniaturized memory structures, such as DRAM, face issues with small surface area and low charge storage capacity, leading to reduced recharging efficiency.
Innovation Solution
A semiconductor structure featuring electrode pillars with alternately distributed first and second conductor layers, where the side surface of the first conductor layer is recessed inward relative to the second conductor layer, increasing the surface area and enhancing charge storage capacity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If a columnar single-sided capacitor structure is used to miniaturize the capacitor size, then the device can be scaled down, but the surface area becomes small and charge storage capacity decreases
Solution Approach 1:
The patent transitions from a conventional single-sided columnar capacitor to a multi-layer stacked capacitor structure with alternating conductor and insulator layers. This dimensional change from a simple column to a layered stack increases the effective surface area within the same footprint, thereby improving charge storage capacity while maintaining miniaturization.
Solution Approach 2:
The patent employs composite material structure with alternating conductor layers (first and second conductor materials) and insulator layers. This composite approach creates multiple interfaces for charge storage, effectively increasing the total surface area available for capacitance without increasing the overall device footprint.
2Ease of manufacture
If a columnar single-sided capacitor structure is used, then manufacturing is simplified, but charge storage capacity is low
Solution Approach 1:
The capacitor structure is segmented into multiple alternating layers of conductors and insulators. This segmentation creates multiple charge storage interfaces within a single capacitor unit, increasing the total charge storage capacity while maintaining a manufacturing process that deposits layers sequentially, which remains relatively simple to implement.
3Quantity of substance
If alternating conductor layers with different materials are used, then charge storage is enhanced, but device complexity increases
Solution Approach 1:
The patent applies local quality by using different conductor materials in alternating layers, where each material can be optimized for specific local functions (e.g., one material for better charge storage, another for better conductivity). This localized optimization enhances overall charge storage capacity while maintaining a regular alternating pattern that doesn't excessively increase manufacturing complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The increased surface area of the electrode pillars improves charge storage and prolongs the recharging time interval of the capacitor structure, enhancing the overall performance of the semiconductor memory unit.
Implementation Method 1
A first conductor material layer and a second conductor material layer are alternately deposited in a direction perpendicular to the substrate
Implementation Method 2
The first conductor material layer and the second conductor material layer are etched to form a first conductor layer and a second conductor layer
Data Source
AI summary
A semiconductor structure and a manufacturing method therefor are provided. The semiconductor structure includes: a substrate; a plurality of connection pads disposed on a surface of the substrate; and a plurality of electrode pillars, disposed on the substrate and connected to the plurality of connection pads in a one-to-one correspondence. Each electrode pillar includes a first conductor layer and a second conductor layer that are alternately distributed in a direction perpendicular to the substrate. A material of the first conductor layer is different from a material of the second conductor layer. A side surface of the first conductor layer is recessed inward relative to a side surface of the second conductor layer.