Semiconductor Layout Decomposition for Odd-Even Feature Patterning
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Solution Overview
Problem
Conventional photolithography techniques face limitations in forming reliable features with fine pitches due to wavelength constraints, leading to decreased yield and increased costs, especially when trying to form odd-numbered features using pitch doubling techniques.
Innovation Solution
A layout decomposition method involving the identification of dense and loose areas, and even-numbered and odd-numbered features, where temporary layers and spacer materials are used with specific masks to form features through double exposure, allowing for the successful transfer of patterns onto semiconductor devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If pitch doubling technique is used to extend photolithography capabilities beyond minimum pitch, then the number of features in a region is doubled, but the areas requiring odd-numbered features are adversely affected
Solution Approach 1:
The substrate is divided into first areas requiring even-numbered features and second areas requiring odd-numbered features. Different mask patterns are applied to different areas: a first mask pattern is used for the first areas to form even-numbered features, while a second mask pattern is used for the second areas to form odd-numbered features. This segmentation allows each area to receive the appropriate pattern treatment.
Solution Approach 2:
Different mask patterns are applied to different regions of the substrate based on local requirements. The first mask pattern with first placeholders is applied to first areas, while the second mask pattern with second placeholders is applied to second areas. This local differentiation ensures that each area receives the specific pattern treatment it needs for its intended feature configuration.
2Manufacturing precision
If conventional photolithography is used with decreasing k1, then finer features are formed, but yield decreases and cost increases
Solution Approach 1:
The patterning process is segmented into multiple exposure steps using different mask patterns. Instead of attempting to form all features in a single exposure at decreasing k1 values, the method divides the feature formation into separate operations: first mask exposure for even-numbered features, second mask exposure for odd-numbered features. This avoids pushing the single-exposure k1 limit while achieving fine pitch features.
Solution Approach 2:
The method transitions from a single-dimensional approach (single exposure with decreasing k1) to a multi-dimensional approach (multiple exposures with different mask patterns). By adding the dimension of sequential exposures and spatially differentiated mask patterns, the process achieves fine pitch features without the diminishing returns and yield losses associated with continued k1 reduction in single exposure.
3Manufacturing precision
If double exposure is adopted for forming fine patterns and large patterns, then features with fine patterns are formed, but the process complexity increases
Solution Approach 1:
The double exposure process is segmented into two distinct operations with clearly defined roles: first exposure with first mask pattern for even-numbered features in first areas, and second exposure with second mask pattern for odd-numbered features in second areas. This segmentation provides structure to the complexity, making the process manageable and systematic rather than chaotic.
Solution Approach 2:
The method performs preliminary actions by pre-defining which areas require even-numbered features and which require odd-numbered features before the exposure process. The mask patterns are designed in advance with appropriate placeholder arrangements tailored to each area's requirements. This preliminary planning simplifies the execution of the double exposure process by eliminating the need for complex real-time adjustments.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the successful formation of even-numbered and odd-numbered features on semiconductor devices without additional complex processing steps, enhancing manufacturing efficiency and compatibility with current processes for mass production.
Implementation Method 1
a temporary layer on the substrate firstly exposed through a first mask having a first pattern substantially related to the dense areas of the substrate
Implementation Method 2
a spacer material is deposited over the placeholders on the substrate
Implementation Method 3
a spacer material is deposited over the placeholders on the substrate
Implementation Method 4
the spacer material is etched to at least form spacers in the dense areas of the substrate
Implementation Method 5
The spacer material at the loose areas and the spacers are exposed secondly through a second mask having a second pattern at least related to the loose areas of the substrate
Data Source
AI summary
A layout decomposition method and a method for manufacturing a semiconductor device applying the same are provided. According to the layout decomposition method, a design layout is received by the logic processer of a computing system. A design rule for layout decomposition is then identified by the logic processer, including identifying the loose areas (areas with loosely distributed features) and dense areas (areas with densely distributed features) on a substrate, and identifying first areas with odd-numbered features and second areas with even-numbered features on the substrate. Next, a first mask with a first pattern and a second mask with a second pattern are generated corresponding to results of design rule identification by the computing system.