HV LDMOS Source Region Projections for Breakdown Voltage

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Solution Overview

Problem

High voltage lateral diffusion metal-oxide-semiconductor (HV LDMOS) and ultra-high voltage (UHV) LDMOS devices face challenges in achieving high ON-state breakdown voltage while maintaining low ON-state resistance, which is crucial for miniaturized semiconductor devices with increased functionality and power efficiency.

Innovation Solution

The semiconductor device design includes a source region with first and second regions of opposite conductivity types, where the second region has projections protruding into the first region towards the gate structure, enhancing minority carrier pickup and increasing the ON-state breakdown voltage without significant size increase or complexity in the manufacturing process.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Volume of moving object

If the device size is reduced for miniaturization, then power consumption decreases and functionality increases, but achieving high ON-state breakdown voltage while maintaining low ON-state resistance becomes more difficult

Engineering Contradiction:

Improvedevice sizeVSAvoidON-state breakdown voltage

Core Design Contradiction:

Volume of moving objectVSReliability

Solution Approach 1:

The invention introduces a vertical projection structure in the second region that extends into the first region, adding a dimensional element that enhances minority carrier pickup capability without increasing the lateral footprint of the device. This vertical dimension allows improved breakdown voltage characteristics while maintaining miniaturized device size.

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The invention creates localized regions with different conductivity types (first and second regions with opposite conductivity types) and different structural characteristics (projections in the second region). This local differentiation allows specific areas to optimize for minority carrier pickup and breakdown voltage while other areas maintain low resistance, resolving the contradiction between reliability and size.

Inventive Principle:

Principle #3Local quality

2Reliability

If the ON-state breakdown voltage is increased, then the safe operating area widens, but the ON-state resistance may increase causing power loss

Engineering Contradiction:

ImproveON-state breakdown voltageVSAvoidpower loss

Core Design Contradiction:

ReliabilityVSLoss of energy

Solution Approach 1:

Inventive Principle:

Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design achieves a higher ON-state breakdown voltage of about 114% compared to comparative devices, while maintaining similar electrical characteristics like ON-state resistance, thus providing a wider safe operating area at high switching speeds without substantial power loss.

Implementation Method 1

enhancing minority carrier pickup and increasing the ON-state breakdown voltage

Methodology Applied

Scientific EffectMinority carrier pickup:

Data Source

PatentUS9748377B2Semiconductor device and method of manufacturing the same

Publication Date: 2017.08.29 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

A semiconductor device includes a gate structure, a source region and a drain region. The source region and the drain region are on opposite sides of the gate structure. The source region includes a first region of a first conductivity type and a second region of a second conductivity type. The second conductivity type is opposite to the first conductivity type. The first region is between the second region and the gate structure. The second region includes at least one projection protruding into the first region and toward the gate structure.