Semiconductor Devices TRIZ Cases

A transmissive display device uses a composite substrate with pixel and opening areas to enhance light and sound transmission.

Segmented gate electrodes with varying thicknesses suppress depletion layer expansion, reducing collector-emitter voltage transition time.

Alternating P-N super junctions combined with high dielectric constant sockets reduce specific on-resistance while maintaining breakdown voltage.

A metal member depression dams translucent covering material on a semiconductor light emitting device.

A gallium oxide Schottky barrier diode uses a field plate structure to distribute electric fields across the drift layer surface.

A light source module uses a substrate to project emitted light beams through the base while maintaining electrical connections via integrated metal layers.

A silicon carbide semiconductor device uses a checkered p-type and n-type pillar configuration to suppress stacking fault expansion.

Segmented absorption and multiplication regions lower breakdown voltage without increasing dark current.

A NiSi device protective region forms a Schottky junction that reduces hole current flow and prevents parasitic thyristor activation in IGBTs.

Varying the gate insulating film thickness suppresses displacement current in the gate electrode, preventing malfunctions during switching operations.

An integrated charge barrier blocks leakage current from activating parasitic bipolar junction transistors, enabling reliable forward bias operation.

Conformal SiGe thin film deposition on semiconductor fins enables precise germanium distribution for enhanced carrier mobility.

Grouping photodiodes into sensors and summing their outputs improves signal-to-noise ratio during off-center light spot detection.

Organic encapsulants convert to non-stoichiometric silica under UV exposure, enhancing photon extraction from ultraviolet light-emitting diodes.

A semi-vertical trench field-effect transistor uses an asymmetric dielectric structure and air cavity to manage electric fields within the device.

An intermediate aluminum gallium nitride layer prevents indium diffusion between varying composition layers, enabling stable multi-wavelength emission.

Segmented gate stack modulates carrier density in fin-shaped field effect transistors to reduce off-state leakage current.

Parabolic reflector geometry in mesa-shaped micro-LEDs redirects omnidirectional emission into focused beams, overcoming low extraction efficiency.

Spacing the phosphor via a resin layer reduces re-absorption and heat transfer, increasing luminous flux by 8 to 18 percent.

Stress control layer reduces dislocation density and crack formation in UV LEDs by mediating stress distribution during epitaxial growth.

An oxidation process merges insulation block and charge storage structure formation to shrink device size without increasing fabrication complexity.

Second region projections in lateral diffusion metal-oxide-semiconductor structures increase ON-state breakdown voltage while maintaining low resistance.

A heat-resistant polyamide composition with controlled end groups and mineral fibers maintains high reflectivity.

A porous silicon layer replaces the electron transport layer in perovskite tandem solar cells to enhance light absorption.

A bi-layer dielectric spacer decouples airgap formation from epitaxy, reducing contact resistance while protecting isolation structures.

Self-aligning mirror protection layers frame metallic mirror openings to increase usable active area and reduce transition resistance.

Transferring spacer layouts creates tapered fins that resolve device density versus manufacturing precision contradictions.

A power semiconductor switch uses a cross-trench structure with control and dummy electrodes to manage load current flow.

High-density plasma deposition creates a thick oxide layer on the trench bottom and mesa area to serve as an implant mask.

Bonding III-nitride light emitting diode wafers to high refractive index glass substrates enables subsequent processing at elevated temperatures.

A moisture-resistant photoluminescent layer converts light while shielding inner sensitive materials from ambient oxygen and humidity.

An insulator layer between the gate electrode and compound semiconductor reduces electric field concentration to suppress current collapse.

Segmenting doping profiles in the p-type contact layer and electron blocking layer reduces defect formation in gallium nitride UV LEDs.

Guard ring structure suppresses edge breakdown to enable higher gain without increasing signal noise.

N-doped emissive layers confine electrons in GaN LEDs to boost radiative recombination rates.

A spaced reflective member redirects laterally emitted light upward, resolving the trade-off between structural simplicity and light loss.

A high-speed superjunction lateral insulated gate bipolar transistor uses a heavily doped substrate to accelerate minority carrier recombination.

A first conductive type doped region under the drain contact blocks local heat concentration, enabling higher voltage robustness.

Removing the field plate electrode while using a segmented GaN cap layer minimizes parasitic capacity and restrains current collapse.

A lateral thyristor photocoupler die-bonds a light-receiving element onto a lead frame with an insulating adhesive.

Field plate reduces electric field magnitude in LDMOS drain finger to prevent local breakdowns.

Distinct zones with varying pattern densities disperse thermal stress to prevent edge warpage and enhance manufacturing yield in micro LED production.

Inorganic particles fill interface gaps in a polysilazane ceramic, preventing moisture permeation and phosphor deterioration.

Deep silicon etching templates create micro holes in a blue LED substrate, enabling multi-color display while protecting quantum dots from physical damage.

Dual-layer transparent electrodes reduce sheet resistance and operation voltage while enhancing luminous efficacy through improved current spreading.

A near ultraviolet light emitting device uses an electron control layer with higher aluminum content to obstruct electron flow and improve crystallinity.

A gallium nitride substrate with a super-lattice buffer reduces dislocation density, lowering forward voltage and enhancing luminous efficiency.

A shielding layer in ohmic contact with a two-dimensional electron gas shields static electricity without increasing parasitic capacitance.

A non-conductive reflective film reflects light while a light absorption barrier reduces loss around electrodes.