SiC Semiconductor Device with Checkered Pillar Configuration
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Solution Overview
Problem
Semiconductor devices with silicon carbide (SiC) substrates face challenges with stacking fault expansion, leading to forward-direction characteristic degradation (Vf degradation) due to basal plane dislocations, which affects the stability and electrical performance.
Innovation Solution
A semiconductor device design featuring a checkered configuration of p-type and n-type pillars along specific crystal directions, which suppresses the expansion of stacking faults by ensuring they stop at the bottom of p-type pillars, thereby preventing Vf degradation and maintaining stable characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional SiC semiconductor device structure is used, then manufacturing is simpler, but stacking faults expand from basal plane dislocations causing forward-direction characteristic degradation
Solution Approach 1:
The semiconductor device is divided into multiple semiconductor members (first semiconductor member and second semiconductor member) with different conductivity types arranged in a checkered pattern. This segmentation prevents stacking fault expansion by creating boundaries that stop fault propagation, thereby improving electrical performance stability without excessive complexity
Solution Approach 2:
Different regions of the semiconductor device are assigned different conductivity types (p-type and n-type) arranged in a checkered pattern. This local differentiation creates specific zones that suppress stacking fault expansion while maintaining overall device functionality, resolving the contradiction between reliability and complexity
2Ease of manufacture
If stacking faults are allowed to expand, then device structure remains simple, but forward-direction characteristic degradation occurs
Solution Approach 1:
The invention converts the potentially harmful stacking faults into a controlled feature by using the alternating p-type and n-type semiconductor members as barriers. The faults are allowed to form but are stopped at the boundaries between differently typed semiconductor members, transforming a harmful uncontrolled expansion into a beneficial controlled feature that maintains device simplicity while preventing degradation
3Reliability
If semiconductor members are arranged in a checkered configuration to suppress stacking faults, then electrical performance stability improves, but manufacturing complexity increases
Solution Approach 1:
The device is segmented into first and second semiconductor members with different conductivity types arranged in a checkered pattern. This segmentation creates natural boundaries that suppress stacking fault expansion while maintaining manufacturability through systematic arrangement
Solution Approach 2:
The checkered arrangement of p-type and n-type semiconductor members serves multiple functions: it suppresses stacking fault expansion, maintains electrical performance stability, and provides a systematic structure that can be manufactured using standard processes. This multi-functionality resolves the contradiction between reliability improvement and manufacturing complexity
Data Source
AI summary
According to an embodiment of the invention, a semiconductor device includes a base body that includes silicon carbide, a first semiconductor member that includes silicon carbide and is of a first conductivity type, and a second semiconductor member that includes silicon carbide and is of a second conductivity type. A first direction from the base body toward the first semiconductor member is along a [0001] direction of the base body. The second semiconductor member includes a first region, a second region, and a third region. The first semiconductor member includes a fourth region. A second direction from the first region toward the second region is along a [1-100] direction of the base body. The fourth region is between the first region and the second region in the second direction. A third direction from the fourth region toward the third region is along a [11-20] direction of the base body.