Group III Nitride Semiconductor Light-Emitting Element With Intermediate Diffusion Barrier
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Solution Overview
Problem
Conventional light-emitting layers with gallium indium nitride layers of different indium compositions suffer from indium diffusion issues, preventing the achievement of intended multiple peak wavelengths due to inadequate barrier layers in superlattice structures like MQW.
Innovation Solution
A laminated structure with intermediate layers of a group III-V compound semiconductor, such as aluminum gallium nitride, is introduced between gallium indium nitride layers to suppress indium diffusion, ensuring the light-emitting layer emits multiple lights with distinct peak wavelengths.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If multiple gallium indium nitride layers with different indium compositions are laminated to emit multiple peak wavelengths, then the light-emitting layer can emit lights with different peak wavelengths, but indium diffusion occurs between layers due to concentration differences
Solution Approach 1:
A barrier layer composed of gallium nitride or aluminum gallium nitride is inserted between gallium indium nitride layers with different indium compositions. This intermediary layer prevents indium diffusion between adjacent layers while allowing the structure to maintain multiple peak wavelength emissions, thus resolving the contradiction between compositional stability and multi-wavelength emission capability.
Solution Approach 2:
The light-emitting layer is constructed as a composite structure combining gallium indium nitride layers (for light emission) with barrier layers of gallium nitride or aluminum gallium nitride (for diffusion prevention). This composite material approach enables simultaneous achievement of multiple peak wavelengths and indium composition stability.
2Stability of the object's composition
If barrier layers are added between gallium indium nitride layers to suppress indium diffusion, then indium composition stability is improved, but the device structure becomes more complex
Solution Approach 1:
Barrier layers are selectively inserted only between gallium indium nitride layers with significantly different indium compositions where diffusion is most problematic, rather than between all adjacent layers. This local application approach maintains indium composition stability while minimizing structural complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively suppresses indium diffusion, allowing for the simultaneous emission of lights with different peak wavelengths, enhancing the light-emitting layer's performance and efficiency.
Implementation Method 1
an intermediate layer that is provided between the first gallium indium nitride layer and the second gallium indium nitride layer
Data Source
AI summary
A group III nitride semiconductor light-emitting element provided with: a semiconductor layer obtained by laminating a first semiconductor layer of a first conduction type, a light-emitting layer, and a second semiconductor layer of an opposite second conduction type; a first electrode connected to the first semiconductor layer; and a second electrode provided on the surface of the second semiconductor layer; the light-emitting layer including a first gallium indium nitride layer of a first indium composition, disposed on a side opposite the light extraction direction; a second gallium indium nitride layer of a second indium composition less than the first, disposed on the light extraction direction side from the first gallium indium nitride layer; and an intermediate layer containing a material of a smaller lattice constant than the materials constituting the first and second gallium indium nitride layers, provided between the first and second gallium indium nitride layers.