Lead-Compound Dielectric Layers for High-Capacitance Low-Leakage Electrodes

The patent changes the material parameters by introducing lead-containing compounds with specific properties (band gap >1 eV, dielectric permittivity >100) to resolve the contradiction between device scaling and reliability. This parameter change enables nanoscale devices to maintain low leakage currents while achieving high capacitance.

The patent employs composite dielectric materials containing lead compounds combined with other oxides or compounds to achieve a synergistic effect. This composite approach allows the material to simultaneously provide high dielectric permittivity for capacitance and large band gap for leakage suppression, resolving the reliability issue during device scaling.

The patent fundamentally changes the material parameters by selecting lead-containing compounds that break the traditional inverse relationship between dielectric permittivity and band gap. These materials achieve both high permittivity (>100) and large band gap (>1 eV) simultaneously, enabling high capacitance without increasing leakage currents.

The patent converts the traditionally harmful effect of lead compounds (potential toxicity and instability) into a benefit by utilizing their unique electronic structure to achieve the desired electrical properties. The lead-containing compounds provide both high dielectric permittivity and large band gap, transforming a potentially problematic material class into a solution for suppressing leakage while maintaining high capacitance.