Oxide films at internal electrode end portions block moisture from Ni-Cu alloy layers, preserving insulation resistance in higher-capacitance MLCCs.
A two-layer polyimide dielectric with conductive particles raises dielectric constant, cuts thickness, and extends capacitor temperature range.
A dual-layer external electrode with conductive metal, epoxy, and acrylic resin boosts MLCC flexural strength while keeping ESR low.
Oxidation and oxide dissolution remove needle-shaped silicon in capacitor trenches, preventing dielectric cracks and leakage failure.
Grain-size gradients in capacitor margin regions deflect voltage-induced cracks away from the capacitance area, improving high-voltage reliability.
Controlling {100} grain orientation in MLCC dielectric layers raises permittivity, enabling smaller capacitors with higher capacitance and reliability.
A tellurium-rich surface layer on tantalum oxide raises capacitance while limiting oxygen defects to preserve capacitor durability.
Recessed external electrodes cut reflected light during thin MLCC inspection while preserving capacitor strength and capacitance.
Controlled cerium and oxygen ratios in Hf-Ce oxide stabilize cerium valence, improving dielectric chemical stability and ferroelectricity.
Internal electrode through-portions filled with dielectric improve bonding, suppress piezoelectric deformation, and reduce cracking under high voltage.
A dense barium zirconium titanate thin film and oxide layer block moisture and hydrogen, preserving MLCC capacity with better strength.
A noble-metal surface layer on the conductive resin electrode cuts ESR, suppresses ion migration, and improves plating reliability.
Dy/Tb rare-earth and Mn tuning stabilizes BaTiO3 dielectric structure, improving X6S temperature properties and high-temperature reliability.
Curved stacked-body surfaces and spaced internal electrode leads reduce corner stress and improve impact resistance in multilayer ceramic capacitors.
Different Ni-based inner electrode compositions trigger redox protection against oxygen ion segregation, preserving MLCC insulation under high fields.
A heavy-edge electrode layout keeps capacitor-region width stable during lamination, preserving capacitance and external electrode contact.
A heavy edge electrode with a laminated metal support layer lowers ESR while preserving thin internal electrodes for higher withstand voltage.
Selective laser oxidation forms metal oxide at internal electrode ends, avoiding step portions and photolithography defects in compact high-capacitance MLCCs.
Hafnium-rich shell layers in dielectric grains raise the potential barrier, improving withstand voltage and reliability at high temperature.
A higher Mn concentration at the electrode center improves insulation bonding while limiting end oxidation and crack formation in humid heat.
Low-temperature hydrothermal doping gives ITO film piezoelectricity while keeping resistance below 10Ω and avoiding crystal-phase damage.
Notched outer electrodes and an L/W ratio of 0.85-1.0 help multilayer ceramic capacitors avoid solder-induced rotation during mounting.
Orienting closed-curve trenches along the substrate's maximum elastic modulus cuts intrinsic stress, wafer bow, and leakage in compact capacitors.
Silicon fills gaps between flattened copper particles to block plating solution penetration and prevent electrode layer peeling.
Different spacer materials on the ceramic body and external electrode improve MLCC bonding strength, mounting durability, and acoustic noise suppression.
A glass-coated conductive core with an oxide layer suppresses frit agglomeration and electrode density loss in multilayer ceramic capacitors.
A curved side margin extension in an MLCC blocks moisture and plating solution ingress while preserving high capacitance in miniaturized parts.
Dummy electrode layers in outer portions absorb lamination stress and limit metal outflow during firing, improving capacitor reliability.
A Ba-based barrier film shields multilayer ceramic capacitor surfaces from moisture while leaving electrode contact areas exposed to keep ESR low.
Controlled Hf-Ce-O ratios stabilize cerium valence in HfO2 dielectrics, preserving ferroelectricity and consistent capacitor characteristics.
A resin electrode layer buffers solder and bending stress in multilayer ceramic capacitors to reduce cracks and improve moisture resistance.
A Ni-Sn solid solution layer stabilizes MLCC electrode-dielectric interfaces, improving voltage resistance and high-temperature load life.
A controlled Ni-Sn solid solution at the curved inner electrode interface strengthens MLCC dielectric bonding and improves voltage resistance.
A graded Sn concentration across multilayer ceramic internal electrodes improves humidity resistance while limiting ESR and firing breakage.
Controlled Al, Mg, Mn, and V doping with grain-size ratio tuning improves MLCC high-temperature reliability and breakdown voltage.
Separate firing with exposed internal electrodes limits over-sintering, reducing voids, ESR, and strength loss in multilayer capacitors.
ABO3 ceramic powder tunes copper paste sintering so thin MLCC inner electrodes keep high coverage and raise capacitance.
Lead-containing dielectric compounds combine high permittivity and a large band gap to boost capacitance while suppressing leakage in nanoscale electrodes.
A Sn diffusion portion at the MLCC electrode interface blocks plating hydrogen, preserving insulation resistance and capacitor reliability.
Full-plate anodizing forms porous alumina without a hard mask, avoiding crack-prone peripheral zones and enabling high-density RF capacitors.
Ni internal electrodes with 3-5 at% Al oxide maintain connectivity in thin MLCC layers while supporting higher breakdown voltage and capacitance.