MLCC Internal Electrode Sn Diffusion Barrier Against Hydrogen
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Solution Overview
Problem
Multilayer ceramic capacitors face reliability issues due to hydrogen penetration during the plating process, which leads to insulation resistance deterioration and reduced adhesion strength between internal electrodes and ceramic dielectric layers.
Innovation Solution
Incorporating a Sn diffusion portion in the region where the internal electrode and external electrode contact, with a Sn content ratio of 3% to 50% relative to the conductive material, to inhibit hydrogen diffusion and maintain insulation resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If a plating layer is formed on the external electrode for ease of mounting, then ease of operation is improved, but hydrogen penetration into the internal electrode increases causing insulation resistance deterioration
Solution Approach 1:
The patent introduces a Sn diffusion portion as an intermediary layer between the external electrode and the internal electrode. This Sn diffusion portion acts as a barrier that prevents hydrogen generated during plating from penetrating into the internal electrode, while still allowing the external electrode to maintain its ease of mounting properties.
Solution Approach 2:
The patent creates a composite structure by forming a Sn diffusion portion within the internal electrode material. This composite approach combines the plating-friendly external electrode with the hydrogen-resistant Sn-containing region, achieving both ease of mounting and insulation resistance protection.
2Reliability
If hydrogen penetration is prevented by adding Sn to internal electrode, then reliability is improved, but manufacturing complexity increases
Solution Approach 1:
The patent applies local quality by creating a Sn diffusion portion only in the specific region where hydrogen penetration occurs (at the interface between external and internal electrodes). The Sn concentration is controlled to be 3-50 atomic%, forming a localized barrier rather than modifying the entire internal electrode structure.
Solution Approach 2:
The patent changes the compositional parameter by controlling the Sn concentration in the diffusion portion to be 3-50 atomic%. This parameter optimization prevents hydrogen penetration while avoiding excessive complexity in manufacturing, as the Sn diffusion can be achieved through controlled diffusion processes during existing manufacturing steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Prevents hydrogen penetration, thereby enhancing the reliability and insulation resistance of the multilayer ceramic capacitors by controlling hydrogen diffusion.
Implementation Method 1
Hydrogen generated during the plating process easily penetrates into a product in which a single metal external electrode is implemented... Hydrogen entering through the external electrode penetrates into the internal electrode of the body
Implementation Method 2
Incorporating a Sn diffusion portion in the region where the internal electrode and external electrode contact, with a Sn content ratio of 3% to 50% relative to the conductive material, to inhibit hydrogen diffusion
Implementation Method 3
when a voltage is applied, the hydrogen atoms are oxidized to emit electrons, and there is a risk that electrons may be accumulated inside the body, causing deterioration of insulation resistance
Data Source
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AI summary
A multilayer electronic component includes a body including a plurality of dielectric layers and an internal electrode including a conductive material, and an external electrode disposed on the body and connected to the internal electrode. The internal electrode includes a Sn diffusion portion including Sn in a region connected to the external electrode, and a ratio of an average number of atoms of the Sn compared to an average number of atoms of the conductive material other than the Sn of the internal electrode included in the Sn diffusion portion is 3% or more and 50% or less.