MLCC Dielectric Composition for High-Temperature Reliability

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Solution Overview

Problem

Conventional multilayer ceramic capacitors (MLCCs) face reliability issues under harsh temperature conditions due to high oxygen vacancy concentrations, leading to deterioration in high-temperature reliability and breakdown voltage, despite efforts to optimize dielectric compositions with acceptor and donor elements.

Innovation Solution

A multilayer electronic component design with specific ratios of Al, Mg, Mn, and Ti acceptor elements in dielectric layers, along with controlled grain sizes and distributions, to enhance dielectric layer densification and reliability, ensuring 0.4 mol≤A1<0.6 mol, 0.44≤A1/(A1+T1)<0.55, and 1.00≤G1/G2<1.50, where A1 and T1 are mole fractions and G1/G2 are grain size ratios.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If acceptor elements (Al, Mg, Mn, V) are added to dielectric composition to improve grain growth and densification, then dielectric layer densification is enhanced, but oxygen vacancy concentration increases leading to reliability deterioration under harsh temperature conditions

Engineering Contradiction:
Improvedielectric layer densificationVSAvoidhigh-temperature reliability
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The patent optimizes the concentration parameters of acceptor elements (Al: 0.4-0.6 mol, Mg: 0.1-0.3 mol, Mn: 0.05-0.2 mol, V: 0.05-0.2 mol) to achieve the optimal balance between densification and oxygen vacancy control. By precisely controlling these compositional parameters, the patent resolves the contradiction between improving manufacturing precision (densification) and maintaining reliability.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent uses a composite dielectric composition containing BaTiO3 base material combined with multiple acceptor elements (Al, Mg, Mn, V) in specific ratios. This composite approach allows synergistic effects where the combination of elements achieves better densification while the specific ratio control prevents excessive oxygen vacancy formation, thus resolving the technical contradiction.

Inventive Principle:
Principle #40Composite materials

2Reliability

If donor dopants are added to fill oxygen vacancies and improve high-temperature reliability, then reliability is improved, but the need for acceptor dopants for uniform grain growth and densification creates a compositional conflict

Engineering Contradiction:
Improvehigh-temperature reliabilityVSAvoiduniform grain growth
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The patent applies local quality by assigning different functional roles to different elements in the dielectric composition. Acceptor elements (Al, Mg, Mn, V) are optimized for grain growth and densification in specific concentration ranges, while the composition is designed to control oxygen vacancy formation. This localized functional assignment resolves the conflict between reliability improvement and uniform grain growth.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent changes the compositional parameters by establishing specific concentration ranges for acceptor elements that simultaneously achieve uniform grain growth (G1/G2 ratio control) and controlled oxygen vacancy concentration. This parameter optimization resolves the contradiction between manufacturing precision and reliability.

Inventive Principle:
Principle #35Parameter changes

3Manufacturing precision

If the concentration of acceptor elements is increased to enhance densification, then dielectric layer densification is improved, but breakdown voltage decreases due to high oxygen vacancy concentration

Engineering Contradiction:
Improvedielectric layer densificationVSAvoidbreakdown voltage
Core Design Contradiction:
Manufacturing precisionVSStrength

Solution Approach 1:

The patent optimizes the concentration parameters of acceptor elements to achieve the optimal balance point. By controlling Al at 0.4-0.6 mol, Mg at 0.1-0.3 mol, Mn at 0.05-0.2 mol, and V at 0.05-0.2 mol, the patent achieves sufficient densification while maintaining breakdown voltage through controlled oxygen vacancy concentration.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent converts the potentially harmful effect of acceptor elements (creating oxygen vacancies) into a beneficial outcome by optimizing their concentration. The controlled presence of oxygen vacancies from acceptor elements is balanced to achieve densification while the specific composition ratios prevent excessive vacancy formation that would reduce breakdown voltage, thus turning a harmful effect into a beneficial one.

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution improves high-temperature reliability and breakdown voltage by optimizing dielectric layer composition and grain characteristics, enhancing moisture resistance and capacitance while maintaining miniaturization.

Implementation Method 1

One of the plurality of dielectric layers includes a first acceptor element containing Al, a second acceptor element containing at least one of Mg, Mn, or V, and Ti

Methodology Applied
Scientific EffectDopants: Dopants

Data Source

PatentUS12562313B2Multilayer electronic component
Publication Date: 2026.02.24 SAMSUNG ELECTRO MECHANICS CO LTD
  • US12562313B2 patent drawing
  • US12562313B2 patent drawing
  • US12562313B2 patent drawing

AI summary

A multilayer electronic component includes a body including dielectric layers and internal electrodes; and an external electrode disposed on the body. The body includes a capacitance forming portion including the dielectric layers and the internal electrodes in a first direction, and a cover portion disposed on both end-surfaces of the capacitance forming portion in the first direction. One of the dielectric layers includes a first acceptor element containing Al, a second acceptor element containing at least one of Mg, Mn, or V, and Ti. The one of the dielectric layers and the cover portion include a plurality of dielectric grains, and a ratio (G1/G2) of an average size (G1) of the plurality of dielectric grains included in the one of the dielectric layers relative to an average size (G2) of the plurality of dielectric grains included in the cover portion satisfies 1.00≤G1/G2&lt;1.50.