Leakage Current Sensing in Semiconductor Integrated Circuits
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Solution Overview
Problem
Next-generation memory devices face challenges with leakage currents, which cause set/reset determination errors in variable resistive memory devices, limiting their performance and reliability.
Innovation Solution
A semiconductor integrated circuit device with a leakage current sensing unit and a determination circuit unit that measures and compensates for leakage currents, allowing for accurate data state determination by comparing voltage levels and currents during read operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If variable resistive memory devices are used to achieve high capacity and ultra-low power, then storage capacity and power efficiency are improved, but leakage currents cause set/reset determination errors
Solution Approach 1:
The patent applies preliminary action by measuring the leakage current of the resistive memory device before performing the set/reset operation. The leakage current measurement is conducted in advance to obtain a reference value, which is then used during the actual set/reset determination process. This preliminary measurement allows the system to compensate for leakage effects and improve determination accuracy.
Solution Approach 2:
The patent implements feedback by using the measured leakage current to adjust and refine the set/reset determination process. The leakage current measurement creates a feedback loop where the obtained leakage value is fed back into the determination logic, allowing for real-time compensation and improved accuracy in distinguishing between set and reset states.
2Reliability
If leakage current sensing unit is added to measure and compensate leakage current, then read error reduction is achieved, but device complexity increases
Solution Approach 1:
The patent merges the leakage current measurement function with the existing readout circuitry of the resistive memory device. By combining these functions into a unified circuit structure, the patent reduces the overall device complexity that would otherwise result from adding a completely separate sensing unit. The integrated approach allows leakage measurement and data reading to share common components.
Solution Approach 2:
The patent makes the readout circuit serve multiple functions: it can perform both the standard read operation and the leakage current measurement. This multi-functionality reduces the need for dedicated separate circuits, thereby limiting the increase in device complexity while still achieving accurate leakage compensation for error reduction.
Data Source
AI summary
A semiconductor integrated circuit device and a system including the same, configured for sensing a pure leakage current of a cell array and improving a read error is disclosed. The system a controller and a memory configured to interface with the controller. The memory includes a semiconductor integrated circuit device includes a leakage current sensing unit configured to sense a pure leakage current of a cell array according to a command of the controller; and a determination circuit unit configured to compare a voltage level of an input node with a reference voltage and determine a state of read data while in a read mode. The voltage level of the input node is decided by comparing an output current and a read current and the output current is decided by summing the pure leakage current and a reference current.