LED Buffer Structure Absorbs Laser Lift Off Energy

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Solution Overview

Problem

Conventional light emitting diodes (LEDs) are prone to damage, such as cracking, during the manufacturing process, particularly due to the impact of laser energy in the Laser Lift Off (LLO) process, which affects their reliability and light emission efficiency.

Innovation Solution

Incorporating a buffer structure with a zener device spaced apart from the light emitting structure, which absorbs the impact of laser energy and prevents damage, while also improving light emission efficiency through a reflective layer and adhesive layers, and enhancing manufacturing reliability.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If the Laser Lift Off process is used to manufacture LEDs, then productivity is improved, but the light emitting structure is damaged by laser energy impact

Engineering Contradiction:
Improvemanufacturing efficiencyVSAvoidstructural integrity
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

A buffer structure is introduced as an intermediary element positioned between the light emitting structure and the substrate. This buffer structure absorbs the impact of laser energy during the LLO process, preventing direct damage to the light emitting structure while enabling the manufacturing process to proceed effectively

Inventive Principle:
Principle #24Intermediary (Mediator)

2Device complexity

If the light emitting structure is placed close to the substrate for compact design, then device complexity is reduced, but the structure is vulnerable to laser damage

Engineering Contradiction:
Improvestructural simplicityVSAvoidlaser energy impact
Core Design Contradiction:
Device complexityVSObject-affected harmful factors

Solution Approach 1:

The buffer structure serves as a protective intermediary that can be integrated into the existing compact design. It is positioned at a specific distance from the light emitting structure, creating a protective zone that absorbs laser energy while maintaining the overall compactness of the device

Inventive Principle:
Principle #24Intermediary (Mediator)

3Ease of manufacture

If no buffer structure is used to maintain simple manufacturing, then ease of manufacture is improved, but cracks occur in the light emitting structure

Engineering Contradiction:
Improvemanufacturing simplicityVSAvoidstructural integrity
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

The buffer structure is prepared in advance and positioned at a predetermined location before the LLO process begins. This preliminary preparation ensures that the protective element is in place to absorb laser energy, preventing cracks in the light emitting structure during manufacturing

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The buffer structure effectively prevents cracks in the light emitting structure, enhances the reliability of the LED, and improves light emission efficiency by absorbing laser energy and maintaining the structural integrity during the manufacturing process.

Implementation Method 1

Incorporating a buffer structure with a zener device spaced apart from the light emitting structure, which absorbs the impact of laser energy and prevents damage

Methodology Applied
Scientific EffectLaser energy absorption: Absorption (EM radiation)

Data Source

PatentUS8748917B2Light emitting device and method thereof
Publication Date: 2014.06.10 BOE HC SEMITEK LTD (HENGQIN)
  • US8748917B2 patent drawing
  • US8748917B2 patent drawing
  • US8748917B2 patent drawing

AI summary

Disclosed are a method of fabricating a light emitting device includes the steps of: forming a plurality of compound semiconductor layers on a substrate, the substrate including a plurality of chip regions and isolation region; selectively etching the compound semiconductor layers to form a light emitting structure on each chip region and form a buffer structure on the isolation region; forming a conductive support member on the light emitting structure and the buffer structure; removing the substrate by using a laser lift off process; and dividing the conductive support member into the a plurality of chips of the chip regions, wherein the buffer structure is spaced apart from the light emitting structure.