Solid-State Devices TRIZ Cases

Amorphous oxide semiconductor thin film enables selective wet etching via oxalic acid solution.

Shared substrate integration avoids cross-talk interference without requiring additional optical filters.

A liquid crystal display uses a common electrode with branch electrodes overlapping pixel electrodes to widen the viewing angle.

Ozone oxidation converts a spin-on layer to an insulating film, enabling cylindrical lower electrode formation without chemical mechanical polishing.

A gate insulation film composed of a specific polymer compound containing defined repeating units to enhance carrier mobility.

A sequential coating process applies a non-stoichiometric first precursor solution to form a uniform intermediate layer before final conversion.

Segmenting the device structure and applying silicon oxynitride passivation resolves the trade-off between forward current and reverse breakdown voltage.

Core-shell quantum dots in a color conversion layer tune emission wavelengths to resolve the trade-off between absorption capability and quantum efficiency.

Dummy microcells isolate noisy edge regions to reduce thermal noise and improve measurement precision in semiconductor photomultipliers.

A FinFET fabrication method maintains a semiconductor layer gap between fin structures in the gate region to prevent merging.

Switch transistors merge floating touch sensing with the common electrode, eliminating bulky external infrared sensors.

An integrated bi-directional Zener diode in the substrate blocks electrostatic discharge and manages surge currents while enhancing heat dissipation.

Sacrificial oxidation converts silicon thin pieces into oxide before argon heat treatment, preventing terrace depressions and contamination on SOI wafers.

Dielectric oxide layers apply compressive stress to counteract tensile forces from conductive layers, reducing substrate curvature in 3D NAND structures.

Multilayer core emitters replace metallic signal lines to reduce power consumption and synchronization issues in photonic integrated circuits.

A light-receiving device integrates silicon and germanium avalanche photodiodes on a single substrate to detect incident photons across diverse spectral ranges.

An OLED pixel structure with four subpixels uses a functional layer to adjust microcavity distances for precise light emission control.

Transmissive phase modulator converts planar images into curved virtual images for three-dimensional displays.

A multi-triggered protection arrangement initiates and maintains signal discharge based on frequency or rise time characteristics.

Rectangular submount integrates bond pads and solder pads to reduce package volume while improving thermal conductivity for miniaturized applications.

Selective channel doping on p-channel thin film transistors manages threshold voltage and cutoff current for pixel circuits.

Selective light-altering materials redirect laterally propagating light along peripheral edges, reducing material usage while maintaining emission uniformity.

Sharp floating gate portions increase local tunneling dielectric thickness, preventing current leakage and improving data retention in compact cells.

A zigzag subpixel arrangement distributes color information across diagonal directions to enhance visual output.

A grinding step removes excess baffle wall material from the top surface of light-emitting devices to ensure uniform height.

Rear-mounted secondary display projects image light through a transparent primary screen region to enable camera functionality.

Wider pad patterns bridge bit line and page buffer pitch mismatch, reducing contact formation complexity in double patterning layouts.

On-pitch drain select gate electrodes align with memory stack structures to optimize device density and isolation in three-dimensional arrays.

Asymmetric memory cell structure reduces threshold voltage shifts by compensating residual electrons through pocket doped regions.

A control chip uses fuse circuits and logic to select operational memory chips, preventing address sequence irregularities caused by faulty components.

A dam structure in the peripheral region of an OLED display substrate enables thin film encapsulation layers to form using a single mask plate.

Multi-layer encapsulation structure uses inorganic films only in the inner inactive area to block moisture and oxygen permeation.

A memory control circuit applies adjusted read voltages to word lines based on sub-block programming status.

Guide strips align monolithic LED strips on flexible backplanes, reducing assembly time and inaccuracy for high-resolution displays.

Patterned buffer layers adjust the neutral layer into the signal wiring to prevent circuit breakage in bending areas.

Orthorhombic doped HfO2 stabilizes ferroelectric properties at 3 nm thickness, resolving compatibility issues with silicon-based semiconductors.

Carbon nanotube conductive layers replace indium tin oxide in flexible touch panels, resolving mechanical durability and resistance uniformity issues.

A lens on the passivation layer refracts light from an organic light emitting diode, resolving total internal reflection that traps energy inside the device.

Deep carbon implantation creates a silicon-carbon alloy region below the channel to induce compressive strain in P-channel transistors.

Adjusting trench isolation layouts relative to emitter dimensions manages mechanical stress in scaled bipolar transistors.

A light-emitting element uses a specific doping concentration index to align semiconductor layers.

Segmented siloxane resin waveguide layers contact a guard ring to stop cracks from reaching photodiodes, preventing chipping and yield loss.

Separating read and write current paths in SOT MTJ cells eliminates high tunnel barrier currents, reducing power dissipation while maintaining search speed.

An organic electroluminescent device uses an interface exciplex to promote reverse intersystem crossing.

Vertical select devices and isolation gaps reduce leakage currents while lowering power consumption in non-volatile storage.

Replacement gate fin first process forms dummy gates before releasing nanowires to enable precise gate all around configurations.

Conductive light blocking layer between common electrode and slit electrode prevents trace mura by ensuring uniform photoresist thickness during manufacturing.

A nonvolatile memory cell uses a bidirectional switch with distinct forward and reverse threshold voltages to manage current flow.

Gas cluster ion beams deposit metal-doped chalcogenide films for resistive random access memory cells, avoiding high-temperature annealing damage.

An OLED display panel integrates a liquid crystal layer between substrates to enable 3D viewing without bulky adhesive layers.

Reverse-tapered contact holes enable direct electrode contact, reducing resistance and power consumption in OLED displays.

Heat treatment melts the hole function layer and first emission layer to improve interfacial bonding in organic light emitting devices.

Variable width sealant strengthens adhesion near function buttons, preventing detachment from external impacts.

Oblique tab positioning in a stepped active region maintains tab size during patterning, preventing hot-electron punch-through degradation.

Forming the display electrode prior to the semiconductor layer prevents over etching during wet patterning while stabilizing thin film transistor performance.

Thermal mixing creates distinct silicon germanium and crystalline silicon fins, enabling independent optimization of nFET and pFET characteristics.

Incorporating light-scattering particles in the pixel isolation insulating film redirects lost light, preventing color mixture and improving display efficiency.

A light emitting device uses a flat transmissive member with a protruding side portion to cover the light extraction surface.

A polarizing film with an extended layer structure secures adhesive bonding on the bezel area to protect flexible displays.

A segmented transistor structure with an interlayer insulating film connects a penetration via to a floating diffusion region in organic image sensors.

Forming protruding solder bumps on recessed contact pads at the wafer level using a stencil to ensure uniform material distribution.

Anodized dielectric oxide layers isolate metal shunts from cathodes, preserving effective pixel area while maintaining electrical conductivity.

Shear stress aligns organic semiconductor molecules during coating to form regular crystalline nano thin films.

Simultaneous gate and direct contact patterning forms a narrow bezel while maintaining five mask processes.

Preliminary encapsulation on the first substrate enables cold transfer of organic devices, minimizing thermal stress while reducing manufacturing time.

A transfer lens conjugates the laser oscillator emission opening with a cylindrical lens incidence plane to project a stable linear beam.

An inorganic encapsulation layer blocks water and oxygen from reaching the quantum dot layer, maintaining luminous efficiency.

A semiconductor light-emitting element uses a first current blocking layer to direct electric current horizontally across the device.

A non-volatile memory device controls program sequences and threshold voltage distributions across word line groups to enhance data retention.

A Schottky contact region retrieves minority carriers from the substrate layer adjacent to an IGBT element.

V-defect microdiodes distribute charge to prevent local destruction from high voltage pulses.

Nanostructured protrusions create hydrophobic barriers that limit ink spread, improving film uniformity and alignment precision in OLED displays.

Embedding quantum dot blocks in substrate indentations converts blue backlight into red and green light, reducing energy loss from absorption.

Epitaxially-defined alignment surfaces with complementary offsets achieve precise vertical optical coupling, eliminating complex mechanical assembly processes.

Gas-filled thermal isolation cell reduces heat conduction from phase change element, lowering reset current requirements.

Branch conductive parts link segmented pixel electrodes to drain lines, preventing short-circuit defects while maintaining high transmittance.

Segmented insulating layers prevent film gaps and cracking during extreme bending to maintain narrow bezel designs.

A bridge electrode with non-uniform thickness connects adjacent light emitting cells to manage current flow across the device structure.

An undercut structure in the non-display area protects the light emitting layer from water and oxygen invasion through via holes.

Integrating ovonic threshold switches into input buffers reduces chip area while maintaining reliable electrostatic discharge protection.

An integrated circuit infrared sensor chip embeds a diffractive optical element on its back surface to direct radiation toward temperature-sensitive elements.

Capacitor support pads reinforce three-dimensional electrodes to prevent tearing at cell block edges during manufacturing.

A collimating optical element directs electromagnetic radiation from a laterally restricted emitting region into a defined solid angle.

Segmented mask sheet body parts minimize deformation during physical vapor deposition, ensuring uniform pattern formation.

Transparent conductive repair lines overlap welding electrodes within the transmission area to maintain aperture ratio while improving yield.

Replacing rigid 3D glass with polyimide layers and an exposed mirror structure reduces frame width while maintaining yield rates.

An insulating layer with a scattering pattern reduces external light reflection intensity, improving visibility in outdoor conditions.

Segmented insulating layers in a reflective display color filter resolve the contradiction between color purity and manufacturing precision.

A memory device uses a first insulator with lower dielectric constant between oxide and semiconductor regions to weaken electric fields.

Insulation fillers bridge word line cutting regions between block regions, preventing leaning while maintaining electrical separation.

Segmented inorganic gas barrier film prevents color filter gas from deforming the seal, maintaining image visibility by blocking bubbles in non-display zones.

An LED structure with a conductive support substrate and segmented functional layers reduces operational voltage while improving light extraction efficiency.

An aluminum antimony gallium arsenic barrier layer aligns valence bands to reduce dark current and enable near zero volt bias operation.

A depletion-type MOS transistor uses a higher impurity concentration in the overlapping region to optimize breakdown voltage characteristics.

A rotating field sensor uses phase detection to cancel noise components from leakage fields and Earth's magnetism.

Non-penetrating trenches on an SOI substrate form conductive channels that boost capacitance density while preserving mechanical strength.

A support frame reinforces metal substrate electrode bonds, preventing breakage during handling of large light-emitting devices.

Segmenting the reflective resin frame allows precise placement without exudation, resolving contact point failures in vehicle headlamps.

Selective nitrogen ion implantation via a resist mask improves MONOS retention while preventing adjacent MISFET property deterioration.

A back-illuminated image sensor uses a doped carbon layer to control electric charges and minimize light loss.