Pixel Structure with Conductive Light-Shielding Layer Storage Capacitor

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

The conventional array on color filter (AOC) substrate design for LCDs faces challenges in improving the aperture ratio due to the space taken up by the common electrode, which is used to form a storage capacitor, limiting the efficiency of the display panel.

Innovation Solution

A pixel structure is designed where a conductive light-shielding layer is placed at the periphery of the pixel region, overlapping with the pixel electrode to form a storage capacitor, thereby replacing the common electrode and enhancing the aperture ratio.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a common electrode is used to form a storage capacitor within the pixel region, then the storage capacitance is achieved, but the aperture ratio is reduced due to the space occupied by the common electrode

Engineering Contradiction:
Improvestorage capacitanceVSAvoidaperture ratio
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

The patent moves the storage capacitor formation from the planar pixel region to the vertical periphery region. The conductive light-shielding layer is positioned at the periphery of the pixel region, overlapping with the pixel electrode in the vertical dimension to form the storage capacitor. This dimensional transition allows the capacitor to occupy space outside the pixel region, thereby improving the aperture ratio while maintaining storage capacitance.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The conductive light-shielding layer serves multiple functions: it acts as a black matrix to block light, provides electrical connection, and forms the storage capacitor with the pixel electrode. By integrating these functions into a single component located at the periphery, the patent eliminates the need for a separate common electrode within the pixel region, thus improving the aperture ratio.

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Area of stationary object

If the conductive light-shielding layer is positioned at the periphery of the pixel region to form a storage capacitor, then the aperture ratio is improved, but the electrical connection complexity increases

Engineering Contradiction:
Improveaperture ratioVSAvoidelectrical connection structure
Core Design Contradiction:
Area of stationary objectVSDevice complexity

Solution Approach 1:

The patent combines the light-shielding function and the storage capacitor function into a single conductive light-shielding layer structure. This merging eliminates the need for separate common electrode and capacitor structures, reducing overall device complexity despite the peripheral positioning. The unified structure simplifies the electrical connection architecture while achieving both light blocking and capacitance storage.

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration improves the aperture ratio by utilizing the conductive light-shielding layer as both a black matrix and a storage capacitor, allowing for greater storage capacitance and better electrical performance compared to conventional designs.

Implementation Method 1

an overlapping area between the pixel electrode and the conductive light-shielding layer constitutes a storage capacitor

Methodology Applied
Scientific EffectCapacitance: Capacitance

Data Source

PatentUS8742437B2Pixel structure and manufacturing method thereof
Publication Date: 2014.06.03 AU OPTRONICS CORP
  • US8742437B2 patent drawing
  • US8742437B2 patent drawing
  • US8742437B2 patent drawing

AI summary

A pixel structure including a substrate, a color filter layer, a conductive light-shielding layer, a buffer layer, a scan line, a data line, an active device, and a pixel electrode is provided. The substrate has a pixel region. The color filter layer is disposed corresponding to the pixel region. The conductive light-shielding layer is disposed corresponding to the periphery of the pixel region. The buffer layer covers the conductive light-shielding layer and color filter layer. The scan line and the data line are disposed on the buffer layer. The active device is disposed on the buffer layer and electrically connected to the scan line and data line. The pixel electrode is disposed on the buffer layer and electrically connected to the active device, wherein an overlapping area between the pixel electrode and the conductive light-shielding layer constitutes a storage capacitor. A method for manufacturing the pixel structure is also provided.