Light-Emitting Element Doping Concentration Index for Display Efficiency
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Solution Overview
Problem
Current display devices face challenges in achieving high luminous efficiency and manufacturing yield due to limitations in the orientation and doping concentration of light-emitting elements, particularly in the semiconductor layers used in light-emitting diodes.
Innovation Solution
A light-emitting element is designed with a semiconductor layer having a specific doping concentration index, exceeding 2.5*10^11 atoms/cm, and a doping concentration profile that includes regions with varying n-type dopant concentrations, optimizing the alignment and efficiency of light-emitting elements within the display device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If the doping concentration of the semiconductor layer is increased, then the luminous efficiency is improved, but the manufacturing precision becomes more difficult to control
Solution Approach 1:
The patent applies parameter changes by optimizing the doping concentration to a specific range (1×10^18 to 1×10^20 atoms/cm³) and defining a doping concentration index (IDC) with specific thresholds (≥2.5×10^11 atoms/cm). This quantified parameter approach transforms the vague concept of 'high doping' into precise controllable specifications, resolving the contradiction between achieving high luminous efficiency and maintaining manufacturing precision.
2Productivity
If the doping concentration index is increased to improve orientation, then the proportion of forward-oriented elements increases, but the manufacturing complexity increases
Solution Approach 1:
The patent introduces a doping concentration index (IDC) as a simplified parameter that consolidates multiple doping characteristics into a single measurable value. By setting a clear threshold (IDC ≥ 2.5×10^11 atoms/cm), the complex doping concentration profile is transformed into a simple pass/fail criterion, enabling rapid quality assessment and increasing manufacturing yield without proportionally increasing manufacturing complexity.
3Stability of the object's composition
If the semiconductor layer structure is optimized for alignment, then the orientation of light-emitting elements is improved, but the manufacturing process becomes more complex
Solution Approach 1:
The patent establishes specific doping concentration ranges (1×10^18 to 1×10^20 atoms/cm³) and an index threshold (IDC ≥ 2.5×10^11 atoms/cm) that serve as manufacturing specifications. These quantified parameters provide clear targets for semiconductor layer fabrication, enabling consistent alignment stability to be achieved through controlled doping processes rather than complex post-fabrication alignment procedures.
Data Source
AI summary
A light-emitting element includes a first semiconductor layer doped with an n-type dopant, a second semiconductor layer doped with a p-type dopant, a light emitting layer disposed between the first semiconductor layer and the second semiconductor layer, and an insulating film that surrounds the first semiconductor layer, the second semiconductor layer, and the light emitting layer. A doping concentration of the first semiconductor layer is in a predetermined range. A display device includes the light-emitting element.