Polycrystalline Silicon Resistor Nitride Layer Segmentation
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Solution Overview
Problem
The reliability of semiconductor apparatuses is compromised due to the degradation of electric connections caused by etching processes applied to nitride films over polycrystalline silicon resistors, leading to instability in resistor values and reduced performance.
Innovation Solution
A semiconductor apparatus design featuring a polycrystalline silicon layer with specific silicon nitride layers and contact plugs, where the silicon nitride layers are strategically positioned to protect the conductive member and improve connection reliability by acting as a barrier and protection layer, reducing the impact of etching and metallic contamination.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If etching is applied to nitride films for contact hole formation, then contact holes can be formed for electric connection, but the reliability of electric connection to polycrystalline silicon pattern degrades
Solution Approach 1:
The nitride film structure is segmented into multiple layers: a first nitride film covering the polycrystalline silicon resistor, a second nitride film formed above the first nitride film, and a third nitride film formed above the second nitride film. This segmentation allows selective etching of the second and third nitride films for contact hole formation while preserving the first nitride film that protects the polycrystalline silicon resistor, thus resolving the contradiction between ease of manufacture and reliability of electric connection.
2Stability of the object's composition
If two nitride films are disposed above polycrystalline silicon resistor, then resistor value stability is improved, but etching complexity increases and connection reliability degrades
Solution Approach 1:
Different regions of the nitride film structure are assigned different qualities and functions. The first nitride film is designed to protect the polycrystalline silicon resistor and maintain its stability, while the second and third nitride films are designed to facilitate contact hole formation. This local differentiation of quality and function allows the structure to simultaneously improve resistor stability and simplify the etching process, reducing overall device complexity.
Data Source
AI summary
A semiconductor apparatus includes a conductive member including a polycrystalline silicon layer having a first, second and third portions, an interlayer insulation film that covers the conductive member, a first silicon nitride layer arranged between the interlayer insulation film and the third portion, a second silicon nitride layer arranged between the interlayer insulation film and the first portion and between the interlayer insulation layer and the second portion, a first contact plug disposed above the first portion and penetrating the interlayer insulation film and the second silicon nitride layer to connect to the conductive member, and a second contact plug disposed above the second portion and penetrating the interlayer insulation film and the second silicon nitride layer to connect to the conductive member. The first silicon nitride layer is disposed between the first and second contact plugs, and apart from the first and second contact plugs.