Nonvolatile Memory Block Regions Insulation Fillers Leaning Prevention
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Solution Overview
Problem
Current nonvolatile memory devices face challenges in achieving high integration and reliability due to the leaning phenomenon and distribution failures in block regions, which affect the electrical separation and connection between block regions and word line cutting regions.
Innovation Solution
The implementation of a nonvolatile memory device with a substrate featuring a mold structure with alternately stacked insulation films and gate electrodes, channel structures penetrating these, and insulation fillers that connect block regions separated by word line trenches, enhancing electrical separation and preventing leaning by supporting the block regions with insulation fillers that match the shape of stack connections.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If block regions are electrically separated by word line cutting regions, then electrical separation between block regions is improved, but structural support and connection between block regions deteriorate
Solution Approach 1:
The mold structure is divided into multiple block regions (first block region, second block region) that are electrically separated by word line cutting regions. This segmentation allows independent electrical control of each block while maintaining physical support through insulation fillers that connect the blocks structurally.
Solution Approach 2:
Insulation fillers are introduced as intermediary elements in the word line cutting regions. These fillers provide both electrical isolation between block regions and structural support to prevent leaning, acting as a mediator that simultaneously addresses both the electrical separation requirement and the structural support need.
2Strength
If insulation fillers are used to connect block regions, then structural support preventing leaning is improved, but electrical separation between block regions may deteriorate
Solution Approach 1:
The insulation fillers are positioned specifically in the word line cutting regions where they are needed for both structural support and electrical isolation. The local placement ensures that the fillers provide structural support where blocks are most vulnerable to leaning while maintaining electrical separation at the critical interfaces between blocks.
Data Source
AI summary
A nonvolatile memory device and a method of fabricating a nonvolatile memory device, the device including a substrate; a first mold structure on the substrate, the first mold structure including a plurality of first mold insulation films and a plurality of first gate electrodes, which are alternately stacked; a channel structure that penetrates the first mold structure and intersects the plurality of first gate electrodes; and at least one insulation filler that intersects the plurality of first mold insulation films and the plurality of the first gate electrodes, wherein the first mold structure is electrically separated by a word line cutting region extending in a first direction such that the first mold structure includes a first block region and a second block region, and the at least one insulation filler is in the word line cutting region and connects the first block region and the second block region.