Negative Photoresist Edge Light Blocking for Semiconductor Yield
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Solution Overview
Problem
In semiconductor device manufacturing, the existing methods for forming a plating electrode face challenges due to exposure light reaching undesirable positions of the negative photoresist from its side surfaces, leading to difficulties in forming the desired pattern and reducing yield rates.
Innovation Solution
A method involving the application of a light blocking material to cover the outer edge of the wafer from the upper surface to the side surface of the negative photoresist, followed by exposure and development, prevents unwanted light exposure and ensures precise pattern formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a light blocking part is formed by ink printing on the negative photoresist near the outer edge of the wafer, then the conductive layer can be exposed according to the intended pattern, but exposure light may reach undesirable positions of the negative photoresist through its side surface, causing the pattern formation to fail
Solution Approach 1:
The light blocking material is applied not only on the upper surface of the negative photoresist but also extended to cover the side surface of the negative photoresist. This three-dimensional coverage approach blocks exposure light from reaching the negative photoresist through its side surface, preventing unwanted illumination and ensuring accurate pattern formation while improving yield rate
Solution Approach 2:
The light blocking material is applied in advance before the exposure process to prevent exposure light from reaching the negative photoresist through its side surface. This preliminary protective action eliminates the risk of unwanted light exposure and pattern formation failures before they can occur
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the yield rate in semiconductor device manufacturing by preventing exposure light from reaching the negative photoresist from the side surfaces, allowing for accurate pattern formation and electrode creation.
Implementation Method 1
applying a light blocking material so as to cover at least a part of an outer edge of the wafer member from an upper surface of the negative photoresist to a side surface of the negative photoresist
Implementation Method 2
Since the negative photoresist has characteristics that a part illuminated with the exposure light becomes insoluble or hardly soluble in a developer
Data Source
AI summary
A method of manufacturing a semiconductor device includes: preparing a wafer member, the wafer member including a wafer, a conductive layer formed on a surface of the wafer and a negative photoresist formed on the conductive layer; applying a light blocking material so as to cover at least a part of an outer edge of the wafer member from an upper surface of the negative photoresist to a side surface of the negative photoresist; exposing the negative photoresist to exposure light; removing the light blocking material; and developing the negative photoresist.