LED Structure with Carbon Nanotube N-Type Layer

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Solution Overview

Problem

Conventional light emitting diodes (LEDs) have complex structures requiring an active layer between N-type and P-type semiconductor layers, which complicates their design and operation.

Innovation Solution

A light emitting diode structure comprising an insulating substrate, a P-type semiconductor layer, a semiconductor carbon nanotube layer, an MgO layer, a functional dielectric layer, and electrodes, where the semiconductor carbon nanotube layer acts as both the N-type semiconductor and active layer, simplifying the structure and enhancing stability and efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If a conventional LED structure with separate N-type semiconductor layer, active layer, and P-type semiconductor layer is used, then the LED can achieve light emission function, but the device structure becomes complex

Engineering Contradiction:
Improvestructure complexityVSAvoiddevice performance
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

The patent combines the N-type semiconductor layer and active layer into a single integrated structure. The N-type semiconductor layer serves dual functions as both the semiconductor material and the active region where light emission occurs, eliminating the need for a separate active layer and reducing structural complexity while maintaining light emission functionality

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The N-type semiconductor layer is designed to perform multiple functions simultaneously: it acts as the semiconductor material for charge carrier injection and as the active layer for light emission. This multi-functional design simplifies the overall device structure by reducing the number of required layers

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Ease of manufacture

If a conventional LED structure with multiple layers is used, then the LED can emit light, but the manufacturing process becomes more difficult

Engineering Contradiction:
Improvemanufacturing difficultyVSAvoidstructure complexity
Core Design Contradiction:
Ease of manufactureVSDevice complexity

Solution Approach 1:

By merging the N-type semiconductor layer and active layer into one integrated structure, the patent reduces the number of fabrication steps required. Instead of separately forming the N-type layer, active layer, and P-type layer, the invention simplifies the manufacturing process by eliminating the active layer formation step while maintaining the necessary light emission function

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The simplified structure improves the LED's stability and efficiency by allowing the semiconductor carbon nanotube layer to function as both the N-type semiconductor and active layer, leading to prolonged lifespan and enhanced performance.

Implementation Method 1

LEDs are semiconductors that convert electrical energy into light

Methodology Applied
Scientific EffectElectroluminescence: Electroluminescence

Implementation Method 2

The MgO layer is located on the semiconductor carbon nanotube layer... holes in the P-type semiconductor layer and photons in the N-type semiconductor layer can enter the active layer and combine with each other to emit visible light

Methodology Applied
Scientific EffectElectron extraction:

Data Source

PatentUS9564594B2Light emitting diode
Publication Date: 2017.02.07 HON HAI PRECISION INDUSTRY CO LTD
  • US9564594B2 patent drawing
  • US9564594B2 patent drawing
  • US9564594B2 patent drawing

AI summary

An light emitting diode includes an insulating substrate, a P-type semiconductor layer, a semiconductor carbon nanotube layer, an MgO layer, a functional dielectric layer, and a first electrode, and a second electrode. The P-type semiconductor layer is located on the insulating substrate. The semiconductor carbon nanotube layer is located on the P-type semiconductor layer. The MgO layer is located on the semiconductor carbon nanotube layer. The functional dielectric layer covers the MgO layer. The first electrode is electrically connected to the P-type semiconductor layer. The second electrode is electrically connected to the semiconductor carbon nanotube layer.