LED Manufacturing via Chip Bonding and Thinning
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Solution Overview
Problem
The existing methods for manufacturing optoelectronic devices with light-emitting diodes are complex and involve numerous steps, including chip transfers and the use of multiple handles, which complicates the process and does not ensure optimal heat dissipation during mounting.
Innovation Solution
A method involving the formation of integrated circuit chips with light-emitting diodes, bonding of additional chips, thinning of chip layers, and integration with a silicon wafer cover containing recesses filled with photoluminescent material, followed by cutting into distinct devices, which simplifies the process and enhances heat dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If traditional manufacturing methods are used with multiple chip transfers and handles, then the process can complete all necessary steps, but the process complexity increases significantly
Solution Approach 1:
The patent combines multiple discrete manufacturing steps into a single integrated process. The first and second integrated circuit chips are bonded together in one step, and subsequent thinning operations are performed on the combined structure, eliminating the need for separate handle attachments and multiple chip transfer operations that characterize traditional methods.
Solution Approach 2:
The first integrated circuit chip serves multiple functions: it acts as both a functional component and a handling substrate throughout the manufacturing process. By bonding the second chip directly to the first chip rather than requiring separate handles, the first chip becomes a multi-functional element that provides both device functionality and process handling capability.
2Temperature
If traditional mounting methods are used, then all necessary functions can be achieved, but optimal heat dissipation conditions are not ensured
Solution Approach 1:
The bonding of the second integrated circuit chip to the first chip is performed before the thinning operation. This preliminary bonding establishes direct thermal contact between the chips while they are still at their original thickness, ensuring that heat dissipation pathways are created early in the process and are maintained throughout subsequent thinning operations.
Solution Approach 2:
The first integrated circuit chip acts as an intermediary thermal pathway between the light-emitting diodes on the second chip and the external environment. By bonding the second chip to the first chip and then thinning the first chip, a direct thermal conduction path is created through the first chip material, optimizing heat dissipation without requiring additional heat sink components.
3Productivity
If multiple handling steps are performed, then all manufacturing operations can be completed, but the manufacturing time increases
Solution Approach 1:
The manufacturing process maintains continuous useful action by performing the bonding operation immediately followed by the thinning operation without requiring intermediate handling steps. The first chip remains in place throughout the process, serving as a continuous substrate that eliminates the need for picking, placing, and re-attaching operations that would interrupt the manufacturing flow.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method simplifies the manufacturing process, eliminates the need for temporary handles, and ensures optimal heat dissipation during the mounting of light-emitting diodes, resulting in efficient and reliable optoelectronic devices.
Implementation Method 1
each recess being filled with a photoluminescent material
Implementation Method 2
the second integrated circuit chip is fixed to the first integrated circuit chip by direct bonding
Data Source
Figure 1~2
Figure 3~4
Figure 5~6
AI summary
The invention relates to a method for manufacturing optoelectronic devices (10) with light-emitting diodes comprising the following steps: a) forming a first integrated circuit chip (11) comprising light-emitting diodes (16); b) bonding a second integrated circuit chip (12) to a first face (13) of the first chip; c) reducing the thickness of the first chip on the side opposite the first face until a second face (15) opposite the first face is formed; d) bonding to the second face a cover (14) comprising a silicon wafer having recesses opposite the light-emitting diodes; e) reducing the thickness of the second chip; f) reducing the thickness of the silicon wafer before step d) or after step e), each recess being filled with a photoluminescent material; and g) cutting the structure obtained in step f) into several distinct optoelectronic devices.