LED Chip Current Spreading Layer Barrier
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Solution Overview
Problem
Conventional LED chips experience reduced light generation efficiency due to direct current injection into the semiconductor layer under the electrical connector body, leading to absorption of radiation, which is not effectively managed by existing contact structures.
Innovation Solution
Incorporating a current barrier in the LED chip that selectively reduces current density laterally, preventing radiation generation in regions covered by the connector body, utilizing a current spreading layer without semiconductor material and forming barriers from epitaxial semiconductor layer sequence materials or interfaces, which can be integrated into the epitaxial process for cost-effective production.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If direct current injection from connector body into semiconductor layer is used, then electrical connection is simple, but radiation generation efficiency is reduced due to absorption in connector body
Solution Approach 1:
The patent introduces a current spreading layer as an intermediary component between the connector body and the semiconductor layer. This layer mediates the current flow by spreading it laterally across the semiconductor layer, preventing direct vertical current injection under the connector body while maintaining electrical connection. The current spreading layer thus resolves the contradiction by enabling both electrical connection and improved radiation efficiency.
Solution Approach 2:
The patent segments the current flow path by introducing the current spreading layer that separates the vertical current injection from the semiconductor layer. The current spreading layer divides the current distribution into lateral flow components, preventing concentration of current directly under the connector body and thereby improving radiation generation efficiency while maintaining electrical connectivity.
2Loss of energy
If current spreading layer without semiconductor material is used, then radiation transparency is improved, but current spreading capability may be reduced
Solution Approach 1:
The patent employs composite material structures in the current spreading layer, combining radiation-transparent materials with conductive properties. The current spreading layer may consist of transparent conductive oxides (TCO) or other composite materials that simultaneously provide radiation transparency and electrical conductivity, resolving the contradiction between radiation transparency and current spreading capability.
Solution Approach 2:
The patent utilizes parameter changes in the current spreading layer materials, specifically adjusting electrical conductivity and radiation transparency parameters. By selecting materials with appropriate conductivity values and optical properties, the current spreading layer achieves both radiation transparency and effective current spreading without requiring semiconductor material.
3Loss of energy
If current barrier is added to prevent direct current injection, then radiation efficiency is improved, but device complexity increases
Solution Approach 1:
The patent makes the current spreading layer multi-functional by combining current spreading, current barrier, and radiation transparency functions in a single layer. The current spreading layer simultaneously spreads current laterally, prevents direct vertical current injection under the connector body, and maintains radiation transparency, thereby improving radiation efficiency without proportionally increasing device complexity.
Solution Approach 2:
The patent merges multiple functions into the current spreading layer: current spreading, current barrier formation, and radiation transparency. By combining these functions that would traditionally require separate layers into a single integrated structure, the patent improves radiation efficiency while minimizing the increase in device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances radiation efficiency by reducing current injection into undesired regions, minimizing radiation absorption by the connector body and allowing better current spreading, particularly beneficial for small LED chips, while maintaining a cost-effective and simple production method.
Implementation Method 1
an electrically conductive current spreading layer (3) which is applied to the semiconductor layer sequence (1) and is electrically conductively connected to the electrical connector body (2)
Implementation Method 2
a radiation-transparent current spreading layer (3) electrically conductively connected to said connector body (2)
Implementation Method 3
at least one current barrier (4) which is suitable for selectively preventing or reducing, by means of a reduced current density, the generation of radiation in a region laterally covered by the electrical connector body (2)
Implementation Method 4
an epitaxial semiconductor layer sequence (1) suitable for generating electromagnetic radiation
Data Source
AI summary
An LED chip is specified that comprises at least one current barrier. The current barrier is suitable for selectively preventing or reducing, by means of a reduced current density, the generation of radiation in a region laterally covered by the electrical connector body. The current spreading layer contains at least one TCO (Transparent Conductive Oxide). In a particularly preferred embodiment, at least one current barrier is contained which comprises material of the epitaxial semiconductor layer sequence, material of the current spreading layer and/or an interface between the semiconductor layer sequence and the current spreading layer. A method for producing an LED chip is also specified.