Solid-State Devices TRIZ Cases

A light emitting device uses a segmented conductive via with expansion parts to connect semiconductor layers.

A display panel circuit structure uses a buried third metal layer to restore electrical connectivity through welding.

Segmented polysilicon layers suppress electric field concentration and leakage current to prevent breakdown voltage failure.

Line-symmetric driver placement maintains consistent differential signal characteristics, reducing development costs from varying chip locations.

A modular controller filters predefined frequency modes and rotates phase to stabilize micromechanical actuators.

A memory device integrates embedded non-volatile memory with replacement metal gate and high-k metal gate modules.

Epitaxial growth replaces ion implantation to form multiple conductive layers, reducing on-resistance and eliminating radiation damage.

Series-coupled select gates reduce feature sizes while maintaining leakage protection in non-volatile memory strings.

Germanium semiconductor pillars increase carrier mobility via substitution heat treatment, reducing series resistance and stabilizing device characteristics.

An aspherical dome lens adapts to quadrangular LED chips by varying curvature across cross-sections to guide light extraction.

Omniphobic liquid directs optical materials to conductive bumps over random micro-LEDs.

Asymmetric convex lens shapes identify UV LED types and orientation, eliminating substrate cutouts while maintaining emission efficiency.

A high voltage transistor uses a thick polysilicon gate as a hard mask to define the channel well.

A light absorbing pattern unit blocks stray red subpixel emission from reaching the sensor array in an organic light emitting display device.

Positioning matched ESD diode arrays adjacent to input devices reduces impedance and improves return loss while preserving matching characteristics.

Laser lift-off removes sapphire substrates from nitride LEDs to enable direct heat dissipation through support structures.

A micro LED transfer method uses asymmetric trapezoidal mounting holes to align inverted electrodes for precise substrate placement.

The bonding enhancement structure buffers bending stress on the first electrode structure, preventing Micro-LED unit peeling and improving display service life.

In-situ formation of a semiconducting layer passivates the III-V surface, reducing interface state density for stable high-performance FET applications.

Acid-resistant Molybdenum-Titanium contact electrodes prevent aperture ratio deterioration during cathode etching.

An array substrate uses a nested shield electrode structure to block electric field lines, mitigating vertical crosstalk caused by capacitance coupling.

Carrier transport layers doped with inert materials reduce refractive indices to improve light extraction in organic electroluminescent devices.

A decoupling metal-insulator-metal capacitor design integrates across multiple interposer metallization layers to achieve high capacitance density.

Vertical connections through substrate openings reinforce bond pads against peeling, ensuring stable electrical contacts during CMOS sensor packaging.

A semiconductor light emitting device uses a textured surface with regularly arranged patterns to extract light from the active layer.

Optimized contact work functions suppress surface recombination velocity to minimize dark current in image sensors.

Auxiliary electrode connects to second OLED electrode, preventing cathode voltage drops and ensuring uniform luminance across the display.

A double-gate semiconductor device combines a MOSFET and dual-gate JFET in a cascode configuration to control conductive characteristics.

Offset spacers control lateral bit line lengths to prevent transport program disturb and increase effective channel length.

A sensor package assembly integrates a redistribution layer, cover body, and moulding compound to encapsulate dies and sensing elements.

Sharp corner strap electrode punctures electron transport layers to connect the OLED cathode directly to an auxiliary electrode.

Current barriers reduce density under connectors to minimize absorption losses and enhance radiation efficiency.

A refractive optical element structures light to ensure consistent irradiance across a camera field of view.

Perimeter reflective resin reduces luminous unevenness by confining light extraction to the wavelength-conversion member upper surface.

Positive bias on dummy memory layers injects holes via band-to-band tunneling, correcting uneven distribution in high-level 3D NAND stacks.

Shifted contact positions absorb bonding errors between memory and peripheral semiconductor wafers.

A 1T DRAM buffer memory with a floating body transistor replaces capacitor-based cells to enable a unified interface across multiple non-volatile devices.

Flash lamp detachment replaces excimer lasers to lower costs and equipment footprint while heat buffer layers prevent thermal damage to active device layers.

Offsetting the MTJ bottom electrode from the copper pad eliminates series resistance and surface roughness issues during MRAM integration.

Doping variable resistance material patterns with high vaporization dopants prevents elemental loss during heat treatment, ensuring uniform composition.

A display device uses a high refractive index member with concave patterns to direct light toward the front viewing direction.

A stacked display module combines an active matrix organic light-emitting diode layer with cholesteric liquid crystal color layers to switch operational modes.

An electroluminescent lighting device uses a point contact structure to maximize the emission area and aperture ratio.

Continuous vacuum processing covers the exposed channel portion with a passivation layer, preventing particle contamination and minimizing leakage current.

An organic compound enables photoelectric conversion within a sensor-embedded display panel substrate.

A well structure on the bank layer supports a multi-layer encapsulation system to minimize delamination from bending stress.

Arithmetic processing circuit calculates internal temperature using thermal sensor data and stored reference values.

A display panel fingerprint circuit uses dual voltage sensing and subtraction to isolate the signal.