LED Chip Reflective Sidewall Coating for Light Leakage Control
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Solution Overview
Problem
The process of manufacturing side wall reflective layers for LED chips is complex and incomplete, leading to issues with light leakage and low photon utilization rates.
Innovation Solution
A method involving a target LED chip with a reflective layer, where a protective layer is deposited on the top surface and etched to expose side walls, allowing for the application of reflective layers that completely cover all surfaces except the bottom and top surfaces, using techniques like solution deposition or vapor deposition, followed by removal of protective layers to achieve full coverage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If traditional methods are used to manufacture side wall reflective layers, then the process complexity is high and coverage is incomplete, but the patent achieves complete coverage with simplified steps
Solution Approach 1:
A protective layer is deposited on the top surface of the LED chip before forming the reflective layer. This preliminary action protects the top surface during subsequent processing steps, enabling complete side wall coverage without compromising the top surface integrity
Solution Approach 2:
The manufacturing process is segmented into distinct steps: depositing protective layer, forming reflective layer on exposed surfaces, then removing the protective layer. This segmentation allows independent optimization of each step, achieving complete coverage while simplifying the overall process
2Loss of energy
If reflective layers are added to increase photon utilization rate, then light leakage prevention improves, but the manufacturing process becomes more complex
Solution Approach 1:
The protective layer is deposited in advance to define the regions where reflective material will be deposited. This allows the reflective layer to be formed only on the side walls through a simple deposition process, avoiding complex patterning steps while achieving complete coverage for maximum photon utilization
Solution Approach 2:
The protective layer acts as an intermediary that temporarily masks the top surface, directing the reflective material deposition exclusively to the side walls. This intermediary approach simplifies the manufacturing process while ensuring complete side wall coverage to prevent light leakage and maximize photon utilization
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method simplifies the manufacturing process, effectively prevents light leakage, increases photon utilization rates, and avoids optical crosstalk between LED sub-units, while ensuring the top surfaces are not damaged during the process.
Implementation Method 1
depositing a first target liquid onto a top surface of the first LED chip to form a target protective layer
Implementation Method 2
etching the second LED chip from the target protective layer, and etching to a surface of the target substrate
Implementation Method 3
treating the third LED chip according to a first target method to form reflective layers respectively wrapped around all surfaces except bottom surfaces
Implementation Method 4
form reflective layers respectively wrapped around all surfaces except bottom surfaces of the plurality of first LED sub-units
Data Source
Figure 1~2
Figure 3
Figure 4a~4b
AI summary
Disclosed are a target LED chip with a reflective layer and a manufacturing method. The method comprises: providing a target substrate to a bottom of an initial LED chip, to obtain a first LED chip; depositing a first target liquid onto a top surface of the first LED chip to form a target protective layer, so as to obtain a second LED chip; etching the second LED chip, to obtain a third LED chip; treating the third LED chip according to a first target method to form reflective layers, so as to obtain a fourth LED chip; and removing top reflective layers, second side wall reflective layers and first sub-protective layers of the plurality of second LED sub-units, to obtain the target LED chip. The present invention solves the technical problem in the related art that the process of manufacturing side wall reflective layers of an LED chip is complex.