Light-Emitting Device Conductive Portion Density for Luminance Uniformity
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Solution Overview
Problem
Existing semiconductor light-emitting element arrays experience uneven luminance distribution due to low current density in certain regions, caused by electrode arrangements, leading to suboptimal performance.
Innovation Solution
The design includes a light-emitting device with specific configurations of semiconductor stacked bodies and conductive portions, where the density of conductive portions in certain regions is adjusted to enhance current distribution, ensuring uniform luminance across the light-emitting surface by optimizing the arrangement of pad electrodes and conductive layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If multiple semiconductor light-emitting elements are disposed on a substrate and connected in series, then the device can achieve higher power output, but uneven luminance distribution occurs due to low current density in certain regions
Solution Approach 1:
The patent applies local quality by varying the density of conductive portions in different regions of the semiconductor stacked body. Specifically, the first region (near the first pad electrode) has a higher density of conductive portions compared to the second region (near the second pad electrode). This non-uniform distribution compensates for the naturally lower current density at the first pad electrode, achieving more uniform luminance across the device while maintaining high power output.
2Reliability
If pad electrodes are arranged to connect multiple light-emitting elements in series, then electrical connection is achieved, but current density becomes non-uniform leading to uneven luminance
Solution Approach 1:
The patent implements local quality by creating region-specific variations in conductive portion density. The first region adjacent to the first pad electrode contains a higher density of conductive portions, while the second region near the second pad electrode has a lower density. This localized adjustment ensures reliable electrical connection while compensating for current density non-uniformity, thereby achieving uniform luminance distribution.
Solution Approach 2:
The patent applies parameter changes by modifying the density parameter of conductive portions in different regions. The density of conductive portions in the first region is specifically increased compared to the second region, changing the electrical conductivity parameter locally to balance current distribution and achieve uniform luminance across the series-connected light-emitting elements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively suppresses uneven luminance distribution by ensuring consistent current density across the light-emitting surface, improving the overall performance and brightness uniformity of the device.
Implementation Method 1
The second semiconductor layer includes a plurality of conductive portions contacting the second conductive layer and having island configurations
Implementation Method 2
a first light-emitting layer disposed between the first semiconductor layer and the second semiconductor layer
Data Source
AI summary
A light-emitting device includes a semiconductor stacked body having first and second semiconductor layers. The second semiconductor layer includes conductive portions contacting a second conductive layer and having island configurations. The conductive portions are disposed in a first region, a second region, a third region, and a fourth region. The first region is positioned at a periphery of a first corner of the semiconductor stacked body. The second region is positioned at a periphery of a second corner of the semiconductor stacked body. The third region is positioned at a periphery of a third corner of the semiconductor stacked body. The fourth region is positioned at a periphery of a fourth corner of the semiconductor stacked body. A density of the conductive portions disposed in the first region is greater than densities of the conductive portions disposed in the second region, the third region, and the fourth region.