LED Contact Structure Layout for Current Spreading and Light Output
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor light-emitting devices face challenges in achieving efficient electrical connections and light emission characteristics due to the design of contact structures and electrode pads.
Innovation Solution
The semiconductor light-emitting device incorporates a specific design with a first and second conductivity-type contact structures, including a bonding portion, an extension portion, and a connection portion, which are electrically connected to electrode pads. This design ensures proper electrical contact and light emission characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the contact structures are designed with extension portions overlapping electrode pads, then electrical connection is simplified, but light emission efficiency deteriorates due to obstruction of light output
Solution Approach 1:
The contact structure is divided into multiple functional portions: a bonding portion for electrical connection, an extension portion for current spreading, and a connection portion linking them. The extension portion is specifically designed not to overlap with the electrode pad in the vertical direction, segmenting the functions to avoid light obstruction while maintaining electrical connectivity.
Solution Approach 2:
The extension portion of the contact structure is configured to extend in a direction not parallel to the sides of the light-emitting device, and specifically not overlapping with the electrode pad in the vertical direction. This spatial arrangement in multiple dimensions allows the extension portion to spread current effectively without blocking the light emission path from the active layer.
2Ease of manufacture
If the contact structure extends parallel to device sides for ease of fabrication, then manufacturing is simplified, but electrical connection efficiency deteriorates
Solution Approach 1:
The extension portion is designed with an asymmetric orientation, extending in a direction not parallel to the sides of the light-emitting device. This asymmetric configuration optimizes the electrical connection efficiency and current spreading pathway, demonstrating that fabrication complexity can be minimized while achieving superior electrical performance through clever geometric design.
3Ease of manufacture
If electrode pads are positioned to overlap contact structures, then bonding process is simplified, but light emission characteristics deteriorate
Solution Approach 1:
The contact structure is segmented into a bonding portion that interfaces with the electrode pad and an extension portion that does not overlap with the pad in the vertical direction. This segmentation allows the bonding process to remain simple while the extension portion maintains unobstructed light emission pathways.
Solution Approach 2:
The extension portion is positioned in a different vertical dimension relative to the electrode pad, creating a non-overlapping spatial arrangement. This dimensional separation ensures that light can emit freely from the active layer without being blocked by the contact structure, while the bonding portion maintains proper electrical connection.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The described design enhances the electrical connections and light emission efficiency of the semiconductor light-emitting device, improving its performance and yield in subsequent packaging processes.
Implementation Method 1
The semiconductor light-emitting stack is located on the first semiconductor contact layer and comprises an active layer
Data Source
AI summary
The present disclosure provides a semiconductor light-emitting device. The semiconductor light-emitting device includes a first semiconductor contact layer, a semiconductor light-emitting stack, a first-conductivity-type contact structure, a second semiconductor contact layer, a second-conductivity-type contact structure, a first electrode pad and a second electrode pad. The semiconductor light-emitting stack is located on the first semiconductor contact layer and comprising an active layer. The first-conductivity-type contact structure is located on the first semiconductor contact layer. The second semiconductor contact layer is located on the semiconductor light-emitting stack. The second-conductivity-type contact structure is located on the semiconductor light-emitting stack and electrically connected to the second semiconductor contact layer. The first electrode pad is located on the first-conductivity-type contact structure. The second electrode pad is located on the second-conductivity-type contact structure. The second-conductivity-type contact structure includes a bonding portion, an extension portion, and a connection portion.