Light Emitting Element Core Doping Area Design
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Solution Overview
Problem
Current display devices with light emitting elements face challenges in efficiency and reliability due to surface energy band bending phenomena and defects during the etching process, which affect carrier distribution and light emission performance.
Innovation Solution
A light emitting element design featuring a core area surrounded by a doping area with a higher doping concentration, where the doping area minimizes surface energy band bending by selectively doping the surface layers, and an insulative film is used to prevent electrical short circuits and enhance reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the etching process is performed to form the light emitting element, then the light emitting element structure is formed, but surface defects and energy band bending occur
Solution Approach 1:
A doping area is formed in advance around the core area before final device operation. This preliminary doping structure is designed to compensate for surface effects that will occur during etching and device fabrication, thereby preventing energy band bending and reducing surface defects before they can degrade device performance
Solution Approach 2:
The patent applies different doping concentrations to different regions: a higher doping concentration is applied to the doping area surrounding the core area, while the core area maintains a lower or zero doping concentration. This local differentiation allows the doping area to specifically address surface energy band bending without affecting the optical properties of the core light-emitting region
2Productivity
If the doping concentration is increased to improve carrier distribution, then light emission efficiency is improved, but surface energy band bending increases
Solution Approach 1:
The patent implements spatially differentiated doping by concentrating high doping concentration in the doping area surrounding the core area, while keeping the core area lightly doped or undoped. This local quality approach enables carrier distribution improvement at the surfaces without inducing harmful energy band bending in the bulk light-emitting region
Solution Approach 2:
The light emitting element is segmented into two functional zones: a core area for light emission and a surrounding doping area for electrical management. This segmentation allows independent optimization of each zone - the core area maintains optimal optical properties while the doping area provides carrier distribution and surface field control
3Productivity
If the doping area thickness is increased to improve carrier distribution, then efficiency is improved, but device complexity increases
Solution Approach 1:
The doping area is designed with a thickness that is sufficient to address surface effects but limited in extent - specifically, the thickness is smaller than the diameter of the core area. This partial action approach provides adequate carrier distribution and surface field control without creating excessive structural complexity or interfering with the core light-emitting function
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution improves the efficiency and reliability of light emitting elements by controlling carrier distribution and minimizing defects, leading to enhanced light emission performance and extended lifespan.
Implementation Method 1
A light emitting element design featuring a core area surrounded by a doping area with a higher doping concentration, where the doping area minimizes surface energy band bending by selectively doping the surface layers
Implementation Method 2
an insulative film is used to prevent electrical short circuits and enhance reliability
Data Source
AI summary
A display device includes a first electrode and a second electrode, spaced apart from each other, and a light emitting element disposed between the first electrode and the second electrode. The light emitting element includes a core area and a doping area surrounding the core area.