LED Structure With Current Blocking Layer for Stable Substrate Separation

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Current light emitting diodes face challenges in stable separation from manufacturing substrates, leading to inefficiencies and potential defects in display devices.

Innovation Solution

A light emitting diode design featuring a current blocking layer, semiconductor layers, and an insulating film that exposes specific portions, allowing for stable separation and electrical connection, with a rod-shaped structure and electrode layers for improved stability and efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional light emitting diode structures are used, then manufacturing is simpler, but stable separation from manufacturing substrate cannot be achieved

Engineering Contradiction:
Improvestable separation from manufacturing substrateVSAvoidstructure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The light emitting diode structure is divided into distinct functional layers including current blocking layer, first semiconductor layer, active layer, and second semiconductor layer. The insulating film is selectively removed to expose specific portions, creating segmented functional zones that enable stable separation from the manufacturing substrate while maintaining electrical functionality.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The insulating film is selectively removed from specific portions of the light emitting diode structure, creating local variations in insulation properties. This local quality change allows electrical connection at exposed portions while maintaining insulation at other areas, enabling stable separation from the substrate without compromising overall device integrity.

Inventive Principle:
Principle #3Local quality

2Reliability

If insulating film completely covers semiconductor layers, then electrical insulation is improved, but electrical connection and light emission efficiency deteriorate

Engineering Contradiction:
Improveelectrical insulationVSAvoidlight emission efficiency
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The insulating film is extracted or removed from specific portions of the light emitting diode structure where electrical connection and light emission are required. This selective removal maintains electrical insulation in areas where it is needed while eliminating insulation barriers at contact regions, thereby improving both electrical connection and light emission efficiency.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The solution transitions from a complete two-dimensional insulating film coverage to a selectively removed configuration, creating three-dimensional functional zones. The insulating film is present in some areas and absent in others, allowing simultaneous electrical insulation and efficient light emission through spatial differentiation.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Ease of manufacture

If uniform doping concentration is used throughout semiconductor layers, then manufacturing is easier, but electrical stability and defect prevention deteriorate

Engineering Contradiction:
Improvedoping process simplicityVSAvoidelectrical stability
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

Different doping concentrations are applied to different semiconductor layers based on their specific functional requirements. The first semiconductor layer has a first doping concentration optimized for its electrical characteristics, while the second semiconductor layer has a second doping concentration optimized for its function. This local quality differentiation improves electrical stability and defect prevention while maintaining manufacturing feasibility.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution enhances the electrical stability and lifespan of light emitting diodes by preventing short-circuit defects and minimizing surface defects, enabling efficient light emission and uniform size production.

Implementation Method 1

a current blocking layer, a first semiconductor layer, an active layer, and a second semiconductor layer, wherein the current blocking layer, the first semiconductor layer, the active layer, and the second semiconductor layer are sequentially disposed in a direction from a second end adjacent to the second electrode to a first end adjacent to the first electrode

Methodology Applied
Scientific EffectElectrical Resistance: Electrical Resistance

Implementation Method 2

an insulating film surrounding outer circumferential surfaces of the first semiconductor layer, the active layer, and the second semiconductor layer and exposing at least a portion of the current blocking layer and at least a portion of the first semiconductor layer at the second end

Methodology Applied
Scientific EffectElectrical Insulation: Dielectric

Data Source

PatentUS12142631B2Light emitting diode and display device including the same
Publication Date: 2024.11.12 SAMSUNG DISPLAY CO LTD
  • US12142631B2 patent drawing
  • US12142631B2 patent drawing
  • US12142631B2 patent drawing

AI summary

A light emitting diode includes a first end and a second end facing each other, a current blocking layer, a first semiconductor layer, an active layer, a second semiconductor layer, and an insulating film surrounding outer circumferential surfaces of the first semiconductor layer, the active layer, and the second semiconductor layer and exposing at least a portion of the current blocking layer and at least a portion of the first semiconductor layer at the second end. The current blocking layer, the first semiconductor layer, the active layer, and the second semiconductor layer are sequentially disposed in a direction from the second end to the first end.