Light Emitting Device Electrode Insulation for Photon Interference
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Solution Overview
Problem
Current light emitting devices using III-V nitride semiconductors face challenges in optimizing light extraction efficiency and electrical connectivity, particularly in the design of electrodes and insulating structures, which can interfere with photon travel and affect overall performance.
Innovation Solution
The design incorporates a light emitting structure with a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, along with a specific electrode configuration and insulating member arrangement that minimizes interference with photon travel while ensuring efficient current diffusion and electrical connectivity, using materials like ITO and Ag for enhanced light extraction and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an electrode is placed under the first conductive semiconductor layer to ensure electrical connectivity, then electrical reliability is improved, but the electrode may interfere with photon travel and reduce light extraction efficiency
Solution Approach 1:
An insulating member is introduced as an intermediary between the electrode and the semiconductor layers. This insulating member has an opening that allows the electrode to contact the first conductive semiconductor layer while the insulating material surrounding the electrode prevents direct interference with photon travel paths, thus resolving the contradiction between electrical connectivity and light extraction efficiency
Solution Approach 2:
The insulating member is positioned locally around the electrode structure, providing insulation only where needed. The opening in the insulating member is precisely positioned to allow electrode contact while minimizing the insulating material's interference with light extraction, achieving local optimization of both electrical and optical properties
2Stability of the object's composition
If a current diffusion layer is added to enhance current distribution, then electrical uniformity is improved, but device structure becomes more complex
Solution Approach 1:
The current diffusion layer is merged with the existing electrode structure and insulating member arrangement. By integrating the current diffusion function into the existing layered structure rather than adding completely separate components, the patent achieves improved current distribution while minimizing the increase in overall device complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves light extraction efficiency and electrical reliability by reducing interference with photon travel and enhancing current diffusion, leading to improved performance in light emitting devices.
Implementation Method 1
an insulating member for covering an outer peripheral surface of the electrode
Implementation Method 2
an electrode including a top surface making contact with a part of a bottom surface of the first conductive semiconductor layer
Implementation Method 3
a light emitting structure including a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer
Data Source
AI summary
Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer; a first electrode layer under the second conductive semiconductor layer; an electrode including a top surface making contact with a part of a bottom surface of the first conductive semiconductor layer; and an insulating member for covering an outer peripheral surface of the electrode, wherein a part of the insulating member extends into a region between the second conductive semiconductor layer and the first electrode layer from a bottom surface of the electrode.