LED Display Ion Implantation Layout for High-Resolution Emission
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Solution Overview
Problem
Existing display devices struggle to achieve high resolution and refresh rates necessary for virtual reality and augmented reality applications.
Innovation Solution
A display device structure incorporating a first semiconductor layer, an active layer, a second semiconductor layer, and an ion implantation region that partitions the active layer into multiple light-emitting regions, with an average ion concentration ratio of 2 to 15, enhancing light-emitting efficiency and resolution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If ion implantation is used to partition the active layer into light-emitting regions, then manufacturing precision is improved, but device complexity increases
Solution Approach 1:
The patent applies parameter changes by precisely controlling ion implantation parameters including ion concentration ratio (2 to 15), implantation energy (less than 8 keV), and process temperature (75°C to 130°C). These parameter optimizations enable high-precision partitioning of the active layer into light-emitting regions while managing the complexity of the ion implantation process through systematic parameter control
2Use of energy by moving object
If the ion concentration ratio is optimized to 2 to 15, then light-emitting efficiency is improved, but manufacturing complexity increases
Solution Approach 1:
The patent optimizes light-emitting efficiency by controlling the ion concentration ratio within the specific range of 2 to 15. This parameter optimization is achieved through precise control of ion implantation conditions including ion type (Ar ions or ions with mass greater than nitrogen ion), implantation energy (less than 8 keV), and process temperature (75°C to 130°C), thereby managing manufacturing complexity through systematic parameter management
3Manufacturing precision
If low implantation energy is used (less than 8 keV), then manufacturing precision is improved, but productivity decreases
Solution Approach 1:
The patent achieves high manufacturing precision by using low ion implantation energy (less than 8 keV). This low energy parameter enables precise control over ion penetration depth and distribution, ensuring accurate partitioning of the active layer. The precision is further enhanced by controlling the process temperature (75°C to 130°C) to optimize ion implantation characteristics while managing the extended processing time associated with low energy implantation
4Manufacturing precision
If process temperature is controlled at 75°C to 130°C, then manufacturing precision is improved, but manufacturing time increases
Solution Approach 1:
The patent optimizes manufacturing precision by controlling the process temperature within the range of 75°C to 130°C during ion implantation. This temperature control ensures optimal ion implantation characteristics and precise partitioning of the active layer. The extended manufacturing time is managed by maintaining this controlled temperature range throughout the ion implantation process, ensuring consistent high-precision results
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution significantly improves the display device's resolution and refresh rate, enabling better performance in virtual and augmented reality applications while minimizing the need for etching processes, thus reducing defects and improving light emission efficiency.
Implementation Method 1
an ion implantation region including a plurality of ions, the ion implantation region partitioning the active layer into a plurality of light-emitting regions
Data Source
AI summary
A display device includes an ion implantation region, a first semiconductor layer, an active layer under the first semiconductor layer, and a second semiconductor layer under the active layer. The ion implantation region includes a plurality of ions and partitions the active layer into a plurality of light-emitting regions, and an average ion concentration ratio of each of the light-emitting regions is 2 to 15.