Laser-Defined Isolation Trenches for LED Epitaxial Stack Segmentation
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Solution Overview
Problem
Conventional light-emitting diode (LED) manufacturing methods do not effectively isolate individual diode units for efficient heat dissipation and circuit formation, leading to suboptimal performance in lighting applications.
Innovation Solution
A method involving the formation of multiple isolation trenches and singulation trenches using a laser beam in a semiconductor epitaxial stack, followed by wet etching and dry etching processes to create distinct light-emitting diode units on a substrate, allowing for electrical insulation and efficient circuit configuration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional manufacturing methods are used without isolation trenches, then the manufacturing process is simpler, but electrical insulation and heat dissipation of individual diode units are insufficient
Solution Approach 1:
The patent divides the semiconductor epitaxial stack into multiple isolated diode units by forming isolation trenches between them. This segmentation provides electrical insulation between adjacent diode units while maintaining a systematic manufacturing process. The isolation trenches act as physical barriers that separate the conductive regions of different diode units, ensuring electrical independence without requiring overly complex manufacturing steps.
Solution Approach 2:
The isolation trench serves as an intermediary structure between adjacent diode units. It provides the necessary electrical insulation and heat dissipation pathways while maintaining the overall structural integrity of the semiconductor device. The trench acts as a mediating element that enables both electrical isolation and thermal management without directly modifying the diode units themselves.
2Temperature
If conventional manufacturing methods are used without isolation trenches, then the manufacturing process is simpler, but heat dissipation of diode units is insufficient
Solution Approach 1:
The isolation trenches segment the semiconductor structure into independent thermal zones. Each diode unit has its own heat dissipation pathway through the trench structure, preventing heat accumulation and improving thermal management. The trenches create physical separation that allows heat to dissipate from each diode unit independently rather than conducting through adjacent structures.
Solution Approach 2:
The isolation trench acts as a thermal intermediary that facilitates heat dissipation from the diode units. By providing a controlled interface between adjacent diode structures, the trench enables efficient heat transfer pathways while maintaining electrical insulation, thus improving overall thermal management without requiring separate cooling systems for each unit.
3Reliability
If multiple isolation trenches are formed using laser beam, then electrical insulation and heat dissipation are improved, but manufacturing time and energy consumption increase
Solution Approach 1:
The patent replaces conventional mechanical or chemical etching methods with laser beam processing to form isolation trenches. The laser provides precise, contactless processing that reduces the need for multiple chemical etching steps and reduces waste material removal. This substitution reduces overall energy consumption while maintaining the quality of electrical insulation and heat dissipation properties.
Solution Approach 2:
The laser processing parameters (power, speed, pulse duration) are optimized to achieve the desired trench depth and width with minimal energy input. By carefully controlling the laser parameters, the process achieves efficient material removal and formation of high-quality isolation structures with reduced energy consumption compared to conventional methods.
4Reliability
If multiple isolation trenches are formed using laser beam, then electrical insulation and heat dissipation are improved, but manufacturing time increases
Solution Approach 1:
The patent combines the formation of multiple isolation trenches into a single laser processing step or overlapping processing passes. Rather than treating each trench separately, the laser beam is programmed to create multiple trenches in one continuous or coordinated operation, significantly reducing the total manufacturing time while maintaining the quality of electrical insulation.
Solution Approach 2:
The laser processing method enables faster trench formation compared to sequential mechanical or chemical etching processes. The laser's ability to rapidly ablate material and form precise structures in a single pass reduces manufacturing cycle time while achieving the same or better electrical insulation quality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the electrical insulation and heat dissipation of light-emitting diode units, improving their performance and manufacturing efficiency by enabling the formation of serial or parallel circuits, thereby increasing the reliability and efficiency of LED devices.
Implementation Method 1
forming multiple isolation trenches in the semiconductor epitaxial stack by using a laser beam irradiating the semiconductor epitaxial stack to define multiple light-emitting diode units
Data Source
AI summary
A method for manufacturing a light-emitting device comprising the steps of: providing a substrate; forming a semiconductor epitaxial stack on the substrate; and forming multiple isolation trenches in the semiconductor epitaxial stack by using a laser beam irradiating the semiconductor epitaxial stack to define multiple light-emitting diode units wherein partial of the substrate is exposed by the isolation trenches.