LED Light-Emitting Layer Patterning Without Side Etching

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Solution Overview

Problem

The manufacturing process of light-emitting diodes (LEDs) faces challenges in yield and quality due to side etching during the formation of the light-emitting layer, particularly when attempting to create smaller-sized layers, making it difficult to control and maintain the process effectively.

Innovation Solution

A manufacturing method involving a patterned insulating layer with insulating openings is used, where the light-emitting layer is formed within these openings, covering a portion of the semiconductor layer, and a second semiconductor layer is deposited on top, improving yield and quality by controlling the formation process.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If the light-emitting layer is formed by etching the light-emitting material layer to define its range, then the light-emitting layer can be created with specific dimensions, but the manufacturing yield decreases due to side etching and process control difficulties

Engineering Contradiction:
Improvelight-emitting layer dimension controlVSAvoidmanufacturing yield
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The patent applies preliminary action by forming the insulating layer with insulating openings before forming the light-emitting layer. The insulating openings serve as pre-defined templates that guide the subsequent formation of the light-emitting layer, eliminating the need for etching and preventing side etching issues. This preliminary structuring enables precise dimensional control while maintaining high manufacturing yield.

Inventive Principle:
Principle #10Preliminary action

2Length of moving object

If the light-emitting layer size is reduced to create smaller LEDs, then the device size and power consumption are reduced, but the process becomes increasingly difficult to control

Engineering Contradiction:
Improvelight-emitting layer sizeVSAvoidprocess control difficulty
Core Design Contradiction:
Length of moving objectVSEase of manufacture

Solution Approach 1:

The patent introduces an insulating layer as an intermediary element that facilitates the formation of small-sized light-emitting layers. The insulating openings in this layer serve as templates that define the dimensions of the light-emitting layer, enabling precise control even at reduced sizes. This intermediary structure simplifies the manufacturing process for small LEDs by providing a clear boundary definition mechanism.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Manufacturing precision

If conventional etching processes are used to form the light-emitting layer, then the layer can be defined with specific boundaries, but side etching occurs that reduces manufacturing yield

Engineering Contradiction:
Improvelight-emitting layer boundary definitionVSAvoidside etching
Core Design Contradiction:
Manufacturing precisionVSObject-generated harmful factors

Solution Approach 1:

The patent extracts the harmful etching process from the manufacturing sequence and replaces it with a deposition-based approach. Instead of removing material through etching to define the light-emitting layer boundaries, the method uses insulating openings as templates to guide the deposition of light-emitting material. This extraction eliminates side etching completely while maintaining precise boundary definition.

Inventive Principle:
Principle #2Taking out (Extraction)

Data Source

PatentUS11955507B2Light-emitting device and manufacturing method thereof and manufacturing method of light-emitting apparatus
Publication Date: 2024.04.09 AU OPTRONICS CORP
  • US11955507B2 patent drawing
  • US11955507B2 patent drawing
  • US11955507B2 patent drawing

AI summary

A light-emitting device, including a first type semiconductor layer, a patterned insulating layer, a light-emitting layer, and a second type semiconductor layer, is provided. The patterned insulating layer covers the first type semiconductor layer and has a plurality of insulating openings. The insulating openings are separated from each other. The light-emitting layer is located in the plurality of insulating openings and covers a portion of the first type semiconductor layer. The second type semiconductor layer is located on the light-emitting layer.