LED Reflective Electrode Layout for Higher Light Extraction
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Solution Overview
Problem
Conventional light-emitting diodes face challenges in achieving high brightness levels required for various optoelectronic applications.
Innovation Solution
A semiconductor stack with a reflective conductive structure and insulative layers are designed to enhance light extraction and distribution, including staggered openings and overlapping contact areas to improve current distribution and light reflection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If conventional light-emitting diode structure is used, then device simplicity is maintained, but brightness is insufficient for high-performance optoelectronic applications
Solution Approach 1:
The device is divided into multiple functional layers including first and second insulative layers with staggered openings, a reflective conductive structure, and multiple electrode groups. This segmentation allows each layer to perform specific functions (current distribution, light reflection, electrical connection) that collectively enhance brightness while managing the overall structural complexity through functional specialization.
Solution Approach 2:
The patent introduces vertical stacking of insulative layers with staggered openings and overlapping contact areas, transitioning from a planar structure to a three-dimensional configuration. This dimensional change enables improved light extraction paths and current distribution without significantly increasing the lateral footprint, thereby enhancing brightness while controlling device complexity.
2Illumination intensity
If simple insulative layer design is used, then manufacturing is easier, but light extraction and current distribution are insufficient
Solution Approach 1:
The insulative layers feature staggered openings and overlapping contact areas with specific local geometries optimized for their positions. The first insulative layer has openings aligned with certain electrode groups, while the second insulative layer has openings aligned with other electrode groups, creating locally optimized current distribution and light extraction paths that enhance overall brightness.
Solution Approach 2:
The structure employs nested insulative layers where the second insulative layer is positioned above the first insulative layer with staggered openings that interlock vertically. This nesting arrangement creates a multi-level architecture that improves light extraction efficiency by providing multiple extraction paths while maintaining manufacturing feasibility through sequential layer formation.
3Illumination intensity
If uniform opening distribution is used, then manufacturing precision is easier to achieve, but current distribution and light reflection are suboptimal
Solution Approach 1:
The openings in the first and second insulative layers are deliberately arranged in asymmetric staggered patterns rather than uniform alignment. The first group of openings in one layer overlaps with the second group of openings in the other layer, creating an asymmetric configuration that optimizes current distribution across different regions of the device while managing alignment precision requirements through the staggered design.
Solution Approach 2:
The overlapping contact areas and staggered openings create curved or rounded current paths through the insulative layers, as opposed to straight linear paths. This curvature allows for more gradual current distribution transitions and improved light reflection angles, enhancing brightness while being more tolerant of manufacturing variations in opening alignment.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design significantly enhances the brightness of light-emitting devices by optimizing light reflection and distribution, addressing the need for higher brightness in optoelectronic products.
Implementation Method 1
a reflective conductive structure formed on the first insulative layer and electrically connected to the second semiconductor layer through the first group of the plurality of first openings
Data Source
AI summary
A light-emitting device includes a semiconductor stack, first and second insulative layers, a reflective conductive structure, and first and second pads. The semiconductor stack includes a first semiconductor layer, and a mesa having an active region having a second semiconductor layer and formed on the first semiconductor layer. The first insulative layer is formed on the semiconductor stack and has first openings. The reflective conductive structure is formed on the first insulative layer and is electrically connected to the second semiconductor layer through the first openings. The second insulative layer is formed on the reflective conductive structure and includes second openings and a contact area covering portions overlapped with the first and second openings. A first pad is formed on the second insulative layer and electrically connected to the first semiconductor layer. A second pad formed on the second insulative layer and electrically connected to the second semiconductor layer.