LED Reflector Layer Layout for Light Extraction and Current Diffusion

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Solution Overview

Problem

Current semiconductor light-emitting devices face challenges in optimizing light extraction efficiency and electrical characteristics due to the trade-off between the area of openings in the insulating layer and their arrangement, which affects current diffusion and light extraction.

Innovation Solution

A semiconductor light-emitting device with a multi-layered structure incorporating a reflective metal layer, sub-electrode layers, and insulating layers with specific opening configurations and widths to enhance reflectivity and light extraction efficiency, while maintaining optimal electrical characteristics.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If the area of openings in the insulating layer is increased to improve light extraction efficiency, then light extraction efficiency is improved, but current diffusion is adversely affected and electrical characteristics deteriorate

Engineering Contradiction:
Improvelight extraction efficiencyVSAvoidelectrical characteristics
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent applies local quality by creating different opening configurations in different regions of the insulating layer. Specifically, a first region has openings with a first area configured for optimal light extraction, while a second region has openings with a second area configured for optimal current diffusion. This allows each region to have localized properties optimized for its specific function, resolving the contradiction between light extraction efficiency and electrical characteristics.

Inventive Principle:
Principle #3Local quality

2Reliability

If the area of openings in the insulating layer is decreased to improve current diffusion and electrical characteristics, then electrical characteristics are improved, but light extraction efficiency deteriorates

Engineering Contradiction:
Improveelectrical characteristicsVSAvoidlight extraction efficiency
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The patent segments the insulating layer into multiple regions with different opening areas. The first region contains openings with a first area optimized for light extraction, while the second region contains openings with a second area optimized for current diffusion. This segmentation allows the device to simultaneously achieve both high light extraction efficiency and good electrical characteristics by distributing different functional requirements to different spatial locations.

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution improves light extraction efficiency and reliability, enabling the use of semiconductor light-emitting devices in large-sized, high-power applications by harmonizing the trade-off between light extraction and electrical characteristics.

Implementation Method 1

a reflective metal layer being in contact with the first semiconductor layer exposed through the first openings

Methodology Applied
Scientific EffectReflection: Reflection

Data Source

PatentUS11908977B2Semiconductor light-emitting device including a reflector layer having a multi-layered structure
Publication Date: 2024.02.20 SAMSUNG ELECTRONICS CO LTD
  • US11908977B2 patent drawing
  • US11908977B2 patent drawing
  • US11908977B2 patent drawing

AI summary

A semiconductor light-emitting device includes a light-emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer which are sequentially stacked, a first insulating layer on the second semiconductor layer with a plurality of first openings having first widths and a plurality of second openings having second widths different from the first widths, a first electrode electrically connected to the first semiconductor layer through the first openings, a first sub-electrode layer between the second semiconductor layer and the first insulating layer, the first sub-electrode layer being exposed through the second openings, and a second sub-electrode layer on the first insulating layer, the second sub-electrode layer being connected to the first sub-electrode layer through the second openings, wherein a first distance between the first openings closest to each other is different from a second distance between the second openings closest to each other.