LED Structure with Schottky Bypass for ESD Protection
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Light Emitting Diodes (LEDs) are vulnerable to electrostatic discharge (ESD) and surge phenomena, which affects their reliability and efficiency.
Innovation Solution
A novel light emitting device structure is developed, featuring a first and second conductive semiconductor layer, an active layer, a connection member forming schottky and ohmic contacts, and an insulating member, which allows current to bypass through a specific path during ESD or surge events, protecting the device and improving light extraction efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional LED structure is used, then manufacturing simplicity is maintained, but vulnerability to ESD and surge increases
Solution Approach 1:
The device is segmented into distinct functional regions: a light emitting structure with n-type and p-type semiconductor layers, a connection member with dual contacts (first contact to n-type layer, second contact to p-type layer), and an insulating member. This segmentation allows the connection member to provide ESD protection through a dedicated current bypass path while keeping the light emitting structure relatively simple.
Solution Approach 2:
The connection member acts as an intermediary element between the n-type and p-type semiconductor layers. It provides a low-resistance current bypass path for ESD protection while maintaining electrical isolation through the insulating member, thus mediating between protection requirements and light emitting functionality.
2Reliability
If additional protection structures are added, then ESD resistance improves, but device complexity increases
Solution Approach 1:
The connection member serves multiple functions: it provides electrical connection between the n-type and p-type layers, creates a current bypass path for ESD protection, and works with the insulating member to prevent short circuits. This multi-functionality achieves surge protection without requiring separate dedicated protection components.
Solution Approach 2:
The insulating member and connection member are merged into a single integrated structure where the insulating member surrounds the connection member. This combination provides both electrical isolation and current bypass functionality in one integrated component assembly, reducing overall device complexity.
3Reliability
If current bypass path is implemented, then ESD damage is prevented, but light extraction efficiency may be affected
Solution Approach 1:
The insulating member is positioned locally around the connection member where it contacts the semiconductor layers, providing electrical isolation only where needed for the bypass path. The light emitting structure maintains its original quality and properties in the regions where light extraction occurs, thus preserving light emitting efficiency while providing ESD protection locally at the contact points.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively prevents damage from ESD and surge events, enhances light emitting efficiency, and minimizes defect rates, thereby improving the reliability of the light emitting device.
Implementation Method 1
the connection member makes contact with a first surface of the first conductive semiconductor layer and a second surface of the second conductive semiconductor layer to form the schottky contact with respect to one of the first and second conductive semiconductor layers
Implementation Method 2
the connection member makes contact with a first surface of the first conductive semiconductor layer and a second surface of the second conductive semiconductor layer to form the ohmic contact with the other of the first and second conductive semiconductor layers
Data Source
Figure 1~2
Figure 3~4
Figure 5~6
AI summary
A light emitting device according to the embodiment includes a first electrode (170); a light emitting structure including a first semiconductor layer (150) over the first electrode, an active layer (140) over the first semiconductor layer, and a second semiconductor layer (130) over the second semiconductor layer; a second electrode (180) over the second semiconductor layer; and a connection member (185) having one end making contact with the first semiconductor layer and the other end making contact with the second semiconductor layer to form a schottky contact with respect to one of the first and second semiconductor layers in order to protect the device against ESD.