Solid-State Devices TRIZ Cases

Dual polarity semiconductor layers in a stacked structure allow continuous light emission on AC power without reverse current damage.

Outer peripheral wiring corrosion in narrow picture frames is suppressed by a low water permeability insulation film and sealant-enveloped resin banks.

Planar double gate FDSOI transistors use selective etching to create multiple bottom gate dielectric thicknesses on a single wafer.

Transparent conductive lines minimize surface area in transmitting regions to prevent image distortion and enhance transmittance.

A display device uses base layers with varying chromatic optical particle concentrations to control light transmission and reflection properties.

Magnetic layers mediate filament growth in RRAM devices, suppressing abrupt state changes and expanding the resistive window for neuromorphic computing.

Control circuit applies specific voltages to word lines and select transistors for selective data erasure in stacked memory arrays.

A polysilicon layer doped with p-type impurities passivates the back surface of a semiconductor substrate to improve photon capture efficiency.

Back gate isolation regions create PNPN junctions that isolate adjacent MOSFET back gates, reducing short channel effects and accidental breakdown risk.

Porous TiO2 scattering layers reduce total internal reflection losses in OLED substrates to improve overall device efficiency.

A projecting shape at the drain interface disperses electric field lines to reduce tunnel current in recessed channel transistors.

Fabrication method separates LED epitaxial layers from substrates to enable backside current spreading and light extraction features.

A flexible eye insert integrates a light source and photodetector to measure glucose levels in tear fluid.

Aluminum-incorporated zinc oxide and cyano compounds reduce interfacial resistance to lower driving voltage.

A display panel uses a light-to-heat conversion layer to remove film layers via laser irradiation.

Segmented black matrix with open areas exposes conductive layers, resolving uneven surface issues that deteriorate transistor electric properties.

Segmented OLED cathodes with oxide barriers prevent electrical shorts while maintaining high light transmittance.

Insulation layer covers lateral surfaces of semiconductor light emitting cells to block parasitic absorption and prevent metal material migration.

Separating the fluid manifold from the silicon die eliminates trapped bubbles and reduces costs by allowing smaller dies.

Segmented insulating layers fill gaps between adjacent light-emitting portions, preventing improper hole transport layer formation and reducing leak currents.

Organic molecules with defined aryl structures emit blue and green light, resolving stability and efficiency trade-offs in OLEDs.

A semiconductor light emitting device structure uses a trench to increase n-type electrode contact area.

An intrinsic pn diode forms inside the programmable material to control current leakage, reducing space consumption and enhancing integration density.

A double-layer gate insulator protects organic semiconductors from heat damage while preventing Schottky barrier formation at source and drain electrodes.

An oxide layer between fins and substrate resolves leakage from insufficient dopant importation, improving reliability.

Pigmented indicator film surrounds organic layers to enable real-time visual monitoring of material boundaries during curing.

A connection member forms a Schottky contact to bypass current during surge events.

A continuous organic light emission layer spans pixel regions to extract uniform optical energy across the display surface.

Al-based reflective film with nickel and rare earth metal prevents galvanic corrosion in OLED electrodes.

A hall element control circuit uses a P-channel transistor and operational amplifier to drive the sensor.

Segmented ultra-thin glass plates positioned away from folded regions maintain moisture barriers while preventing cracks during repeated folding.

Color-specific doping profiles extend blue light exposure time and boost signal strength while reducing optical cross-talk between adjacent pixels.

A phosphor with controlled particle diameter distribution enhances luminous intensity in light emitting devices.

A nitride semiconductor field effect transistor uses extraction electrodes to manage capacitance distribution within active regions.

A light-emitting element uses a host material with a lower triplet excited state level than the guest material to enable efficient energy transfer.

Phase-separated electron donating and accepting blocks improve photoelectric conversion efficiency while reducing crosstalk in high resolution pixels.

Wider upper fence portions buried in anti-reflection layers suppress pixel cross-talk and minimize optical loss, improving sensor sensitivity.

A novel insulated gate bipolar transistor device connects a first insulated gate field effect transistor in series with a second field effect transistor.

Dual resist patterns with distinct dissolution properties enable simultaneous metal layer deposition and selective lift-off for precise thin film formation.

A ferroelectric memory cell uses a series connected select gate transistor to isolate the non-ferroelectric control element from the storage node.

A control circuit applies specific threshold voltage distributions to memory cells, enabling precise multi-level data programming in nonvolatile semiconductor devices.

A p-type semiconductor layer with a low resistance portion enclosed by high resistance confines charge carriers to enhance luminous efficiency.

Nitrogen plasma treatment forms an oxynitride region in oxide semiconductor films to lower contact resistance at metal interfaces.

A stress compensation layer disperses mechanical strain across flexible display substrates during bending cycles.

Light reflection patterns and spacers maintain precise gaps between touch electrodes and display elements to minimize parasitic capacitance.

A light dispersion layer scatters LED emission to enlarge the effective light-emitting area on a display substrate.

Segmented quantum dot layers in a bank structure resolve color coordinate non-uniformity by converting light wavelengths at specific pixel positions.

A patterned aromatic amine priming layer enables controlled liquid deposition of subsequent layers on fluorinated substrates.

Array substrate capacitor merges transistor active layer with drain electrode, reducing area occupation and improving aperture ratio.

A capacitor electrode well uses segmented P-type and N-type tub regions to divert substrate noise current away from the sensitive dielectric layer.

Planar bias contacts reduce contact resistance and enhance response time while insulating layers enable thicker photosensitive films.

Segmented conductive lines and localized optical plates distribute vertical stress to prevent cracks in flexible display devices.

Dynamic voltage scaling adjusts supply levels based on circuit speed to optimize standard cell performance.

Segmented tungsten deposition and etching-back eliminate seams in high aspect ratio holes, reducing contact resistance in phase-change memory.

Silicon-germanium nitride barrier controls oxygen diffusion to prevent silicon dioxide regrowth, reducing CET and EOT during dopant activation anneal.

Perpendicular polarizing layers and a phase difference film block side-view visibility, protecting user privacy in public settings.

A static random access memory layout pattern uses transistors with varying gate lengths to balance electrical current flow across the cell structure.

Uniform active area widths prevent dummy cell breakage from uneven electric fields, enhancing reliability.

Boost structures reduce programming voltages and minimize program disturb in NAND flash memory devices.

Segmented transfer printing on convex substrates reduces vacuum evaporation complexity while enhancing light emission.

A filterless image sensor uses depth-differentiated photodiodes to detect color signals without optical filters.

Segmented bank structures with alternating sub-banks minimize film thickness unevenness and linear luminance defects caused by ink accumulation.

A display panel integrates a deformation sensing unit with multiple electrodes forming capacitors to detect shape states.

Antiparallel light-absorbing chips provide electrostatic discharge protection and internal light measurement, eliminating external photosensors.

Adhesive bonding joins a wavelength conversion layer to a radiation-emitting sequence for durable optoelectronic assembly.

Cleaning the gas pipeline before etching removes nickel impurities, ensuring anisotropic openings and improving NOR flash manufacturing yield.

Segmented power grid design minimizes word line coupling capacitance and landing margin issues in split-word line memory cells.

Merging the P doping charge generating layer with the hole transporting layer reduces driving voltage by eliminating separate deposition steps.

Integrated P-channel transistor and Zener diode circuit prevents overvoltage damage while reducing external component costs.

Vertical capacitor protrusions double storage capacitance without expanding pixel area or degrading TFT reliability.

Sequential CVD deposition creates conductive diamond layers on GaN substrates, reducing thermal resistance and increasing output power.

Single crystal perovskite units convert blue excitation to red and green light, widening the display color gamut beyond organic LED limits.

A pixel structure uses a bent signal line covered by the pixel electrode to shield electric fields and reduce crosstalk.

A thiadiazol polymer enables solution processing of organic electronic devices.

A doped hollow channel vertical NAND string segments its pillar into two regions with independent doping levels to optimize electrical conductivity.

Laser irradiation separates variable resistance layer portions to form memory elements within substrate openings.

A variable resistance layer with controlled oxygen deficiency lowers initial breakdown voltage while maintaining reliability.

Segmented stripe electrodes connect light-emitting diodes across a carrier substrate to establish electrical pathways.

Optimizes indium composition in quantum well layers to enhance wave function overlap, reducing efficiency droop at high current densities.

Curved through-contacts anchor within molded bodies, resolving displacement risks while reducing electrical resistance.

A hybrid cathode and anode layer combine conductive nanowires with charge transport materials to form a three-layer organic photovoltaic circuit.

Thermal oxidation grows a protective oxide spacer on the silicon oxynitride layer, preventing lateral etching damage to top oxide layers during wet processing.

Patterned substrates with stress-reducing openings grow group III-nitride layers, reducing dislocation density in deep ultraviolet LEDs.

Printing formulation with inorganic ester solvent enables uniform functional film formation via inkjet deposition.

Nonplanar channels increase transconductance while avoiding short channel effects and read noise in high-density image sensors.

Novel organic host compound enhances luminous efficiency in emitting layers while resisting Joule heating degradation.

Periodic compression and retraction forces disrupt non-conductive paste traps to ensure wet connections between solder bumps and leads.

Color film substrate structure with auxiliary cathode layer and via holes connects transparent conductive layer to reduce fabrication complexity.

A release layer or air layer enables easy detachment of the sealing member from the light emitting device substrate.

A display device uses separated impurity-doped semiconductor films to increase resistance between gate signal lines and common connection lines.

Hydrophilic and hydrophobic bank regions separate emission layers via capillary action, preventing mixing during solution deposition for high resolution.

A nano-scale hydrophobic film layer with an uneven surface structure creates a nanometer-scale ultra-thin air layer on the encapsulation.

Segmented semiconductor layer with patterned holes lowers electrical resistance, resolving the trade-off between reduced thickness and transistor reliability.

Vertical stacking of the transfer gate over the photodiode resolves full well capacity loss during sensor scaling.

An inclined anode surface reflects oblique light back into the display, boosting external quantum efficiency and preventing color mixing.

Transparent light guide members with high refractive indices minimize absorption and reflection losses at thin film interfaces, improving sensor sensitivity.

Enlarged blue subpixel areas reduce current density, preventing deterioration while maintaining red and green layer performance.

A fence structure uses a metal barrier layer to prevent mask material penetration into the low refractive index layer.

Vertical gate electrodes in a substrate trench reduce NAND flash memory footprint while maintaining channel voltage cutoff reliability.

An organometallic compound acts as a host in the emission layer to enhance charge mobility and stability.