OTFT Array Panel Double-Layer Electrodes and Gate Insulator
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Solution Overview
Problem
The manufacturing of organic thin film transistor (OTFT) array panels faces challenges due to the low heat and chemical resistance of organic semiconductors, which can lead to degradation, and the formation of a Schottky barrier with low-resistance conductor electrodes, increasing the number of masks required and manufacturing costs.
Innovation Solution
The OTFT array panel design includes a gate line and pixel electrode with transparent conductive oxide and metal layers, a data line with a double-layer structure, and source and drain electrodes made of the same material, along with an interlayer insulating layer and a protection member to enhance stability and reduce the number of masks needed in the fabrication process, using techniques like ink jet printing for forming the gate insulator and organic semiconductor.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If organic semiconductor materials are used in OTFT fabrication, then flexibility and solution-processability are improved, but heat and chemical resistance deteriorate causing easy damage in follow-up processes
Solution Approach 1:
The gate insulator is formed before the organic semiconductor layer is deposited. This preliminary formation of the gate insulator protects the organic semiconductor from damage during subsequent processing steps, addressing the low heat and chemical resistance issue while maintaining the benefits of organic materials
Solution Approach 2:
The gate insulator acts as an intermediary layer between the gate electrode and the organic semiconductor. This intermediary structure protects the organic semiconductor from direct exposure to harsh conditions in follow-up processes, resolving the contradiction between using organic materials and maintaining their stability
2Power
If low-resistance conductor electrodes (such as aluminum) are used for source and drain, then electrical conductivity is improved, but Schottky barrier formation occurs degrading TFT characteristics
Solution Approach 1:
The gate insulator serves as an intermediary layer that prevents direct contact between the low-resistance conductor electrodes and the organic semiconductor, thereby preventing Schottky barrier formation while maintaining good electrical conductivity of the electrodes
Solution Approach 2:
The gate insulator automatically provides the function of preventing Schottky barrier formation through its inherent insulating properties, eliminating the need for additional protective layers or complex electrode structures
3Reliability
If additional protective structures and stacks are added to protect organic semiconductor, then stability is improved, but device complexity and manufacturing cost increase due to more masks required
Solution Approach 1:
The gate insulator performs multiple functions simultaneously: it provides electrical insulation, protects the organic semiconductor from heat and chemical damage, and prevents Schottky barrier formation. This multi-functionality improves stability without requiring additional protective structures or increasing manufacturing complexity
Solution Approach 2:
The protective function is merged into the gate insulator structure itself, combining the insulation and protection functions in a single element rather than requiring separate protective layers, thereby reducing device complexity and mask requirements
Data Source
AI summary
An organic thin film transistor (OTFT) array panel for a display device includes a gate line and a pixel electrode formed on a substrate, the gate line and pixel electrode each having a first conductive layer including a transparent conductive oxide and a second conductive layer including a metal, a data line crossing the gate line and including a source electrode, a drain electrode facing the source electrode and connected with the pixel electrode, and an organic semiconductor in contact with the source electrode and the drain electrode.