Semiconductor LED Self-Assembly Structure for Larger Emission Area
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Solution Overview
Problem
Existing display devices using semiconductor light emitting devices face challenges in securing sufficient light emitting area, improving light extraction efficiency, and enhancing bonding strength between magnetic layers during self-assembly.
Innovation Solution
The semiconductor light emitting device is designed with a second conductivity type semiconductor layer, an active layer, and a first conductivity type semiconductor layer, where the magnetic layer is formed on the second conductivity type semiconductor layer. This structure allows for a symmetry plane that extends in the same direction as the longitudinal direction of the magnetic layer, improving assembly accuracy and bonding strength.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Extent of automation
If a magnetic layer is added to enable self-assembly, then assembly automation is improved, but device complexity increases
Solution Approach 1:
The semiconductor light emitting device is divided into functional layers including a magnetic layer segment that is specifically designed for self-assembly. This magnetic layer segment can be selectively removed or retained based on application requirements, allowing automation without permanently increasing overall device complexity.
Solution Approach 2:
The magnetic layer is introduced as a separate, extractable component that enables self-assembly during manufacturing but can be removed in subsequent processes. This allows the automation function to be taken out from the final device structure, maintaining simplicity in the deployed product while achieving automation during fabrication.
2Ease of operation
If electrodes are spaced apart in the horizontal direction for self-assembly, then ease of operation is improved, but light emitting area is reduced
Solution Approach 1:
The electrode arrangement and magnetic layer orientation are designed to exploit dimensional relationships during self-assembly. The magnetic layer's longitudinal direction is aligned perpendicular to electrode extension, enabling assembly control in one dimension while preserving light emitting area in other dimensions through vertical layering rather than horizontal spacing.
3Manufacturing precision
If a symmetrical structure is used for self-assembly, then manufacturing precision is improved, but light emitting area is limited
Solution Approach 1:
Symmetry is applied locally only where needed for self-assembly precision (in the magnetic layer structure and electrode arrangement), while the light emitting region maintains maximum area through asymmetric optimization. The active layer and light emitting surfaces are designed with local quality variations that prioritize emission area without compromising the symmetrical assembly mechanism.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution enhances the assembly speed and accuracy of semiconductor light emitting devices during self-assembly, secures a large light emitting area, and increases light extraction efficiency by reflecting leaked light, while minimizing defects through improved adhesive force of the magnetic layer.
Implementation Method 1
the self-assembly method is a method in which the semiconductor light emitting device finds its own position in a fluid
Implementation Method 2
Such a semiconductor light emitting device must include a magnetic layer due to the characteristics of self-assembly
Implementation Method 3
a semiconductor light emitting device having a diameter or cross-sectional area of 100 μm or less
Implementation Method 4
an active layer formed on a part of the second conductivity type semiconductor layer
Data Source
Figure 1
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Figure 4~5b
AI summary
According to an embodiment of the present invention, a display device using a semiconductor light emitting device includes a base part; a plurality of assembly electrodes extending in one direction and formed at predetermined intervals on the base part; a dielectric layer stacked on the base part to cover the assembly electrodes; a barrier wall portion stacked on the dielectric layer while forming a cell overlapping at least a portion of the assembly electrode along the extending direction of the assembly electrode; and a plurality of semiconductor light emitting devices seated in the cell. The semiconductor light emitting devices include a magnetic layer extending in a longitudinal direction.