Semiconductor Light Emitting Device With Through-Hole Electrode
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor light emitting devices, such as LEDs, face challenges in achieving high luminance while maintaining a low forward voltage, as existing configurations often result in increased resistance and voltage due to current distribution issues.
Innovation Solution
The semiconductor light emitting device incorporates a first electrode layer with through-holes, a light-reflective second electrode layer, and a transmissive intermediate layer with specific contact and non-contact portions, which confine current flow and enhance conductivity, thereby increasing current density without increasing forward voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If an electrode is provided in a dot configuration to increase current density, then luminance is improved, but forward voltage increases
Solution Approach 1:
The electrode is divided into multiple dot-shaped contact portions arranged in an array, which segments the current distribution and increases current density in the light emitting layer without requiring excessive voltage. Each dot contact portion acts as an independent current injection point, collectively achieving high luminance while maintaining low forward voltage.
Solution Approach 2:
The dot configuration creates local high current density regions at each contact portion, while the overall electrode structure maintains low resistance pathways. This local quality enhancement allows current to be concentrated where needed (in the light emitting layer) without increasing the overall forward voltage of the device.
2Illumination intensity
If current density is increased to achieve high luminance, then illumination intensity is improved, but resistance increases
Solution Approach 1:
The segmented dot configuration distributes current across multiple parallel pathways, which increases current density in the light emitting layer while maintaining low overall resistance. The segmentation allows current to flow through multiple independent routes, reducing the resistance burden while achieving the required current density for high luminance.
Solution Approach 2:
The electrode structure transitions from a conventional planar configuration to a three-dimensional dot array configuration. This dimensional change allows current to be injected at multiple discrete points, creating efficient current spreading paths that reduce resistance while maintaining high current density in the active light emitting region.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables high luminance at a low voltage by effectively confining current flow and maintaining low resistance, resulting in improved efficiency and reduced forward voltage.
Implementation Method 1
a second electrode layer stacked with the first electrode layer along a stacked direction, and light-reflective
Implementation Method 2
A plurality of through-holes are provided in the metal portion. Each of the through-holes has an opening having an equivalent circular diameter not less than 10 nanometers and not more than 5 micrometers
Implementation Method 3
The first intermediate layer includes a plurality of first contact portions and a first non-contact portion. The first contact portions provide electrical contact having a first electrical resistance between the second electrode layer and the second semiconductor layer
Data Source
AI summary
According to one embodiment, a semiconductor light emitting device includes first and second electrode layers, a and second semiconductor layers, a light emitting layer and a first intermediate layer. The first electrode layer has a metal portion having through-holes. The second electrode layer is stacked with the first electrode layer along a stacked direction, and light-reflective. The first semiconductor layer is provided between the first and second electrode layers, and has a first conductivity type. The second semiconductor layer is provided between the first semiconductor layer and the second electrode layer, and has a second conductivity type. The light emitting layer is provided between the first and second semiconductor layers. The first intermediate layer is provided between the second semiconductor layer and the second electrode layer, transmissive to light emitted from the light emitting layer, and includes first contact portions and a first non-contact portion.