LED Substrate Transfer Using a Dense Transition Carrier Layout

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Solution Overview

Problem

Existing methods for manufacturing light-emitting diode (LED) substrates face inefficiencies due to the need to transfer LED chips from small substrates to larger driving substrates, resulting in low transfer efficiency and increased processing steps.

Innovation Solution

A manufacturing method that involves forming epitaxial layer groups of LED chips on substrates, transferring these groups to a transition carrier substrate with a larger area, and then transferring the LED chips to a driving substrate, allowing for denser arrangement and improved transfer efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If LED chips are transferred directly from small substrates to large driving substrates, then the transfer process is simpler, but the transfer efficiency is low and processing time is increased

Engineering Contradiction:
Improvetransfer efficiencyVSAvoidprocessing time
Core Design Contradiction:
ProductivityVSLoss of time

Solution Approach 1:

The patent introduces a transition carrier substrate as an intermediary between the original substrate and the driving substrate. Multiple substrates are first transferred to the transition carrier substrate in a dense arrangement, and then LED chips are transferred from the transition carrier substrate to the driving substrate. This two-stage transfer process with an intermediary carrier significantly improves transfer efficiency and reduces processing time compared to direct transfer methods.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Productivity

If more LED chips are arranged on the transition carrier substrate, then the transfer efficiency improves, but the alignment precision becomes more difficult to maintain

Engineering Contradiction:
Improvetransfer efficiencyVSAvoidalignment precision
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent performs preliminary arrangement and dense packing of multiple substrates on the transition carrier substrate before the final transfer to the driving substrate. This preliminary action allows for optimized spatial arrangement and ensures that alignment features are established early in the process, making subsequent alignment operations more manageable despite the increased number of chips being transferred.

Inventive Principle:
Principle #10Preliminary action

3Quantity of substance

If the area of the transition carrier substrate is increased to accommodate more substrates, then the transfer capacity increases, but the device complexity increases

Engineering Contradiction:
Improvenumber of substrates transferredVSAvoidsubstrate transfer system complexity
Core Design Contradiction:
Quantity of substanceVSDevice complexity

Solution Approach 1:

The patent segments the transfer process into two distinct stages: first transferring multiple substrates to the transition carrier substrate, and then transferring LED chips from the transition carrier substrate to the driving substrate. This segmentation allows the system to handle large quantities of substrates without requiring a single overly complex transfer operation, thereby managing device complexity while increasing transfer capacity.

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS12249529B2Light-emitting diode substrate and manufacturing method thereof, display device
Publication Date: 2025.03.11 BOE TECHNOLOGY GROUP CO LTD
  • US12249529B2 patent drawing
  • US12249529B2 patent drawing
  • US12249529B2 patent drawing

AI summary

A light-emitting diode substrate, a manufacturing method thereof, and a display device are disclosed. The manufacturing method of the light-emitting diode substrate includes: forming an epitaxial layer group of M light-emitting diode chips on a substrate; transferring N epitaxial layer groups on N substrates onto a transition carrier substrate, the N epitaxial layer groups on the N substrates being densely arranged on the transition carrier substrate; and transferring at least part of N*M light-emitting diode chips corresponding to the N epitaxial layer groups on the transition carrier substrate onto a driving substrate, an area of the transition carrier substrate is greater than or equal to a sum of areas of the N substrates, M is a positive integer greater than or equal to 2, and N is a positive integer greater than or equal to 2.