Light-Emitting Device Trench Etching for Electrical Connectivity
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Solution Overview
Problem
Conventional light-emitting devices face challenges in efficiently manufacturing light-emitting arrays with high precision and connectivity between light-emitting units, particularly in creating trenches that expose the bottom of the first trench for effective electrical connections.
Innovation Solution
A manufacturing method involving a substrate with a light-emitting structure formed by first and second trenches, where the second trenches partially expose the bottom of the first trenches, allowing for the formation of light-emitting units connected by conductive structures and bonding pads, enabling efficient electrical connectivity and separation of light-emitting units.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional etching processes are used to form trenches between light-emitting stacks, then insulation between stacks is achieved, but the ability to expose the bottom of trenches for effective electrical connections is limited
Solution Approach 1:
The patent performs a preliminary etching step to form first trenches that do not completely penetrate the active layer, then performs a second etching step from the opposite side to expose the bottom of the first trenches. This preliminary action allows controlled exposure of trench bottoms for electrical connections without compromising the overall structure.
Solution Approach 2:
The etching process is segmented into two separate steps: first etching from one side to create initial trenches, then etching from the opposite side to expose the trench bottoms. This segmentation allows independent optimization of each etching step for different purposes (insulation vs. electrical connection).
2Productivity
If light-emitting stacks are closely arranged to increase array density, then productivity is improved, but the difficulty of forming precise trenches and ensuring connectivity between units increases
Solution Approach 1:
The patent introduces a second etching dimension by etching from the opposite side of the substrate. This dual-directional approach allows trenches to be formed with precise depth control and bottom exposure, enabling closer stacking of light-emitting units while maintaining manufacturing precision.
3Reliability
If trenches are etched to completely penetrate the active layer for electrical connections, then connectivity is improved, but the structural integrity and insulation between units deteriorates
Solution Approach 1:
The patent applies partial action by etching trenches only to the extent needed to expose the bottom for electrical connections, rather than completely penetrating the active layer. This partial etching maintains structural integrity while providing sufficient connectivity.
Solution Approach 2:
The trenches have different depths and characteristics at different locations: the sidewalls provide insulation while the exposed bottoms provide electrical connection points. This local differentiation of trench properties allows simultaneous achievement of insulation and connectivity.
Data Source
AI summary
A light-emitting device includes: a carrier; a light-emitting structure formed on the carrier, wherein the light-emitting structure has a first surface facing the carrier, a second surface opposite to the first surface, and an active layer between the first surface and the second surface; a plurality of first trenches extended from the first surface and passing through the active layer so a plurality of light-emitting units is defined; and a plurality of second trenches extended from the second surface and passing through the active layer of each of the plurality of light-emitting units.