Microlithography Lens Wavefront Correction Model

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Solution Overview

Problem

Existing microlithographic projection exposure apparatuses face challenges in achieving precise correction accuracy of imaging behavior due to imprecise control commands generated by conventional optimization algorithms.

Innovation Solution

A method that utilizes a model describing wave front deviation as a function of travel variables, comprising offset, linear, and quadratic coefficients, to generate control commands for the manipulator system. This method calibrates offset coefficients more frequently than linear and quadratic coefficients to improve correction accuracy with minimal slowdown in the exposure process.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If conventional optimization algorithms are used to generate control commands, then the exposure process maintains operational efficiency, but the correction accuracy of imaging behavior is insufficient

Engineering Contradiction:
Improvecorrection accuracyVSAvoidoperational efficiency
Core Design Contradiction:
Measurement precisionVSProductivity

Solution Approach 1:

The model coefficients are segmented into three groups (offset coefficients, linear coefficients, and quadratic coefficients) with different calibration frequencies. Offset coefficients are calibrated most frequently, linear coefficients less frequently, and quadratic coefficients least frequently. This segmentation allows the system to maintain high correction accuracy by frequently updating the most critical parameters while preserving operational efficiency by calibrating less critical parameters less often.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent implements periodic calibration of model coefficients at different frequencies. Offset coefficients undergo periodic calibration before each substrate exposure, linear coefficients are calibrated periodically but less frequently than offset coefficients, and quadratic coefficients are calibrated periodically with the longest interval. This periodic action ensures accuracy is maintained when most needed while minimizing overall calibration time.

Inventive Principle:
Principle #19Periodic action

2Measurement precision

If all model coefficients are calibrated frequently, then correction accuracy is improved, but the exposure process experiences significant slowdown

Engineering Contradiction:
Improvecorrection accuracyVSAvoidcalibration time
Core Design Contradiction:
Measurement precisionVSLoss of time

Solution Approach 1:

Different calibration frequencies are assigned to different groups of coefficients based on their relative importance and sensitivity. Offset coefficients, which have the greatest impact on correction accuracy, are calibrated most frequently (before each substrate). Linear coefficients are calibrated with moderate frequency, and quadratic coefficients with the lowest frequency. This local quality approach ensures that time is invested proportionally to the impact each coefficient group has on overall accuracy.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent applies partial calibration action by selectively calibrating only the most critical coefficients (offset coefficients) before each substrate exposure, rather than calibrating all coefficients equally. This partial action provides sufficient correction accuracy for each exposure cycle without the time penalty of full system recalibration, while less critical coefficients are updated less frequently.

Inventive Principle:
Principle #16Partial or excessive action

Data Source

PatentEP4521169A1Method of operating a microlithographic projection exposure apparatus
Publication Date: 2025.03.12 CARL ZEISS SMT GMBH
  • EP4521169A1 patent drawingFigure 1
  • EP4521169A1 patent drawingFigure 2~3
  • EP4521169A1 patent drawingFigure 4

AI summary

A method of operating a microlithographic projection exposure apparatus (10) is described. The exposure apparatus comprises a mask holder (20) for holding a mask (18), a substrate holder (26) for holding a substrate (24), a projection lens (30) having several optical elements (R1 - R4) for imaging mask structures of the mask onto the substrate and a manipulator system (34), wherein the optical elements, the mask holder and the substrate holder each are an optical path element in an exposure optical path of the projection exposure apparatus and the manipulator system is configured for adjusting several travels, defined by travel variables (68), at the optical path elements of the projection lens. The method comprises the following steps: providing a wave front deviation (50) of the projection lens, and determining a control command (42) comprising travels for the manipulator system for correcting the wave front deviation using a model (60). The model describes the wave front deviation as a function of the travel variables and for this comprises a group of offset coefficients (62), which are independent of the travel variables, a group of linear coefficients (64), which are each attributed to one of the travel variables to the power of one, and a group of quadratic coefficients (66), which are each attributed to a product of two of the travel variables or to a square of one of the travel variables. The offset coefficients (62) are calibrated more frequently than the linear coefficients (64).