Single-Stage Level Shifter With Low-Resistance Bypass Paths
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Solution Overview
Problem
Single stage level shifter circuits face reliability issues due to increased area and current consumption when additional bias is added, limiting their operating voltage range and frequency support.
Innovation Solution
A single stage voltage level shifter circuit with a first and second low resistance path, bypassing high resistance paths and enhancing current mirror block capacity through MOS devices, allowing it to operate at a wide range of voltages and frequencies.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If additional bias is added to a single stage level shifter circuit, then reliability is improved, but area and current consumption increase
Solution Approach 1:
The patent extracts and removes the additional bias circuitry from the single stage level shifter design. By eliminating the extra bias transistors and associated circuitry, the design achieves reliable operation without the area and current consumption penalties that would normally accompany enhanced reliability measures.
Solution Approach 2:
The patent employs dynamic voltage gating control where the voltage at the gate terminal of the first transistor is dynamically adjusted based on operating conditions. This dynamic control allows the circuit to adapt its behavior to maintain reliability across different voltage and frequency conditions without requiring additional static bias circuitry.
2Reliability
If additional bias is added to a single stage level shifter circuit, then reliability is improved, but current consumption increases
Solution Approach 1:
The patent extracts and removes the additional bias circuitry from the single stage level shifter design. By eliminating the extra bias transistors and associated circuitry, the design achieves reliable operation without the area and current consumption penalties that would normally accompany enhanced reliability measures.
Solution Approach 2:
The circuit uses the existing input signal and internal node voltages to control the operation of transistors, rather than requiring external bias currents. The gate voltage of the first transistor is controlled by the voltage at its gate terminal, which is derived from the circuit's own operation, making the circuit self-sufficient without additional bias power consumption.
3Strength
If device component sizes are increased to improve overdrive strength in a two-stage level shifter, then overdrive strength is improved, but area and current consumption increase
Solution Approach 1:
The patent employs dynamic voltage gating control where the voltage at the gate terminal of the first transistor is dynamically adjusted based on operating conditions. This dynamic control allows the circuit to adapt its behavior to maintain reliability across different voltage and frequency conditions without requiring additional static bias circuitry.
4Strength
If device component sizes are increased to improve overdrive strength in a two-stage level shifter, then overdrive strength is improved, but current consumption increases
Solution Approach 1:
The patent employs dynamic voltage gating control where the voltage at the gate terminal of the first transistor is dynamically adjusted based on operating conditions. This dynamic control allows the circuit to adapt its behavior to maintain reliability across different voltage and frequency conditions without requiring additional static bias circuitry.
Data Source
Figure 1A
Figure 1B
Figure 1C
AI summary
A single stage level shifter includes a first MOS device which bypasses a high resistance path generated by a p-type transistor at a left branch of a voltage level shifter block. A second MOS device reduces resistance created by the n-type transistor at the left branch of the level shifter block, so that the single stage level shifter is able to perform over a wide range of high core (input) voltages. A p-type transistor block pulls down an n-side of an N-side final output 326 of a level shifter block at a right branch of the single stage level shifter. Also, an n-type transistor block assists in changing a final output block of the single stage level shifter 324 to a level high.