Current-Mirror Level Shifter for Thin-Oxide Reliability Limits
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Solution Overview
Problem
Existing level translators are ineffective in translating low voltages to higher voltages in newer memory technologies, such as those at 7 nanometers or less, where periphery logic must operate at very low voltage levels to reduce power consumption, and existing solutions exceed the reliability limits of single gate, thin oxide transistors.
Innovation Solution
A voltage level shifter circuit utilizing a combination of dual gate, thick oxide high voltage transistors and single gate, thin oxide transistors, with current mirror leg circuits and NOR gates, to translate low voltage inputs to higher voltage outputs while maintaining operational reliability and power efficiency across a wide temperature range.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If existing level translators are used to translate low voltage to high voltage, then voltage translation can be achieved, but the solution exceeds the reliability limits of single gate, thin oxide transistors and is ineffective for very low voltage levels (7 nanometers or less)
Solution Approach 1:
The level shifter circuit is divided into two separate current mirror leg circuits: one optimized for low voltage operation with single gate, thin oxide transistors, and another for high voltage operation with dual gate, thick oxide transistors. Each leg handles a specific voltage range, allowing the circuit to translate voltages across a wide range while maintaining reliability within each segment's operational limits.
Solution Approach 2:
Different transistor types are used in different parts of the circuit based on voltage requirements. Single gate, thin oxide transistors are used in the low voltage leg where they operate efficiently, while dual gate, thick oxide transistors are used in the high voltage leg where they provide the necessary breakdown voltage and reliability. This local optimization allows each part of the circuit to operate in its optimal regime.
2Use of energy by moving object
If periphery logic operates at very low voltage levels to reduce power consumption, then power efficiency is improved, but existing level translators become ineffective and exceed transistor reliability limits
Solution Approach 1:
The circuit changes the operational parameters of the transistors by using two different transistor types with different threshold voltages and breakdown characteristics. The low voltage leg operates transistors in a low voltage regime to minimize power consumption, while the high voltage leg uses transistors specifically designed to handle higher voltages safely, thus maintaining reliability even when translating from very low voltage inputs.
3Device complexity
If a single transistor type is used for voltage translation, then device complexity is reduced, but the circuit cannot simultaneously handle both very low voltage inputs and higher voltage outputs within reliability limits
Solution Approach 1:
The voltage translation function is segmented into two distinct current mirror legs, each handling a specific voltage range. The low voltage leg uses single gate, thin oxide transistors optimized for low voltage operation, while the high voltage leg uses dual gate, thick oxide transistors optimized for high voltage operation. This segmentation allows the circuit to handle a wide voltage range while keeping each segment's complexity manageable and within reliability limits.
Data Source
AI summary
The present disclosure relates to a structure which includes a voltage level shifter circuit which includes a first current mirror leg circuit and a second current mirror leg circuit, the first current mirror leg circuit receives an input signal on a low voltage power supply and level shifts the input signal to a high voltage power supply which is at a greater voltage than the low voltage power supply, and the high voltage power supply is output from the second current mirror leg circuit.