Leveled Conductive Pad for TSV Wire Bonding
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Solution Overview
Problem
Through-silicon vias (TSV) with dimples or recesses pose processing difficulties in 3D IC stacking due to challenges in wire bonding and can result in voids if plating current density is not well-controlled, increasing costs and decreasing throughput.
Innovation Solution
A semiconductor device package with a conductive pillar and a leveled conductive pad, where the pad serves as an etch protection layer and provides a flat surface for wire bonding, allowing for improved interconnection and reducing void formation by aligning the conductive pillar with a carrier body and removing a temporary carrier through etching.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If TSV filling is performed to create through-silicon vias for interconnection, then electrical connection path is shortened and resistance/inductance are reduced, but dimples or recesses are formed on the TSV structure which cause processing difficulties in subsequent 3D IC stacking
Solution Approach 1:
A conductive pad is formed on the TSV structure before wire bonding to create a flat surface in advance. This preliminary action of adding the conductive pad eliminates the dimple/r凹陷 problem that would otherwise prevent proper wire bonding, allowing subsequent bonding processes to proceed without difficulty while maintaining the electrical benefits of the TSV structure.
2Productivity
If plating current density is increased to improve TSV filling efficiency, then throughput is improved, but voids may be generated in high aspect ratio TSVs which increase cost and decrease throughput
Solution Approach 1:
The conductive pad is designed with local quality differentiation - it has a first surface that contacts the TSV structure and a second surface that protrudes to provide a flat bonding surface. This local structural variation allows the TSV filling process to proceed with controlled current density while the pad structure compensates for any void formation, maintaining both throughput and filling quality.
3Ease of operation
If a flat surface is provided for wire bonding to improve bonding reliability, then wire bonding ease is improved, but the TSV structure with dimples cannot provide this flat surface directly
Solution Approach 1:
The conductive pad merges multiple functions into a single structure: it serves as an electrical connection element, provides the flat surface for wire bonding, and acts as a structural bridge between the TSV and the bonding surface. This consolidation creates a flat bonding surface without significantly increasing overall device complexity, as the pad integrates seamlessly with the existing TSV interconnection architecture.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables efficient signal transmission between dies by providing a reliable, flat surface for wire bonding and preventing voids in TSVs, enhancing the flexibility of interconnection paths and reducing manufacturing costs and complexity.
Implementation Method 1
The leveled pad is an etch protection layer to the conductive pillar
Implementation Method 2
there is difficulty in landing on a dimpled or recessed surface, which prevents the lower die(s) of the interconnection architecture from transmitting signals among the upper die(s)
Implementation Method 3
Through-silicon vias (TSV) are commonly used as interconnections in 2.5D or 3D IC packaging to facilitate electrical interconnection or signal transmission
Data Source
AI summary
The present disclosure provides a semiconductor device package. The semiconductor device package includes a substrate having a first surface and a second surface opposite to the first surface of the substrate. The substrate has a through opening extending between the first surface of the substrate and the second surface of the substrate. The semiconductor device package also includes a conductive pad in the through opening and approximal to the second surface of the substrate. The conductive pad has a first surface and a second surface opposite to the first surface of the conductive pad. The semiconductor device package also includes a conductive pillar in contact with the first surface of the conductive pad. The second surface of the conductive pad protrudes from the second surface of the substrate. A method of manufacturing a semiconductor device package is also disclosed.