Semiconductor/Solid-State Device Details TRIZ Cases

A conductive clip system connects semiconductor electrodes directly to package I/O contacts.

A hybrid bonded semiconductor device stacks wafers face-to-face and back-to-back using vertical electrical connections without through-vias.

Localizing insulating film run-over reduces shear stress from thermal expansion mismatch while maintaining coupling reliability.

Integrating row and column contacts inside the pixel area reduces interconnection complexity, eliminating visible seams in large-format displays.

A semiconductor substrate structure uses cured photo-sensitive resin to encapsulate conductive traces and define dielectric openings for electrical access.

Dummy gate lines buffer selection lines from cell gates, reducing interference while maintaining high integration density.

An asymmetric printed circuit board layer stack uses specific dielectric properties to maintain mechanical stability.

An enlarged intersection node connects signal lines to rescue lines, eliminating repeated manual operations that increase RC values.

Fusing a glass substrate to a silicon interposer reduces thermal expansion mismatch and signal loss compared to organic substrates.

An encapsulation structure fills a sealant cavity with hydrophobic liquid to block moisture and oxygen ingress, extending OLED service life.

Replacing slow cooling, a moisture-sensitive precursor chemically binds water in polymer materials to lower contact resistance at aluminum bond pads.

Segmented manufacturing modules and nested interconnection architectures reduce time and cost while enhancing reliability.

Stair-step electrode structures with variable pad spacing resolve wiring freedom constraints in three-dimensional semiconductor memory devices.

A semiconductor seal ring features a Z-shaped notch that segments the structure to block moisture ingress and prevent noise coupling between circuits.

Conductive plug contacts exposed film in stacked structure to enhance electrical conductivity while resolving manufacturing precision constraints.

Grinding the interposer substrate exposes through-substrate vias after die bonding, eliminating carrier mounting steps that increase manufacturing costs.

Vertical lead routing through the substrate thickness secures connection distance while eliminating thick elastomer layers to reduce overall device thickness.

Direct formation of metal pads and traces on a laser-activatable mold compound reduces parasitic electrical effects while eliminating lead frame complexity.

A multi-layer full dense mesh structure distributes power signals through stacked metal layers and vertical interconnects.

Segmenting routing layers isolates high-speed traces from low-speed noise, reducing electromagnetic interference without adding complexity.

A conformable pad and gasket form a sealed barrier around electronic devices to contain failure emissions.

Tape apertures position solder balls over die contacts to eliminate underfill flow bottlenecks and prevent voiding.

A static induction transistor integrates a trench gate with a PN super-junction structure to control current flow.

Dynamic PWM frequency switching reduces inverter heat loss while maintaining measurement accuracy of transient thermal resistances.

Segmented shielding structures convert parasitic capacitance to ground, minimizing write interference and improving memory yield.

A semiconductor device uses optical modules to transfer data between stacked memory wafers.

Exposed lead frame surfaces dissipate heat from an active component while maintaining distance between electrodes to prevent short circuits.

A tubular fan duct casing integrates a motor controller housing to enclose electronics.

Columnar fins and opposing recesses segment the flow path to prevent shortcuts, reducing pressure loss variations while enhancing thermal management.

Dual-metal barrier layer prevents mirror material migration, maintaining electrode conductivity under high current.

Segmented ground shield portions reduce parasitic capacitance and improve inductor quality factor at 28 nm dimensions.

A laser-resistant metallic pattern surrounds a projection area to enable controlled drilling without damaging underlying structures.

Selective sidewall exposure in the molding layer reduces thermal stress from coefficient mismatches, preventing cracks and warpage in the semiconductor package.

Elevated copper bumps on semiconductor dies enable vertical stacking within molding compound, resolving I/O pad density limits while preventing solder bridges.

Flux application and two-stage pressing ensure uniform oxide films on solder bumps.

Vertical channels pass through stacked gate lines, reducing transistor area and enabling higher integration density.

A photoresist film incorporates alignment marks to enable precise pattern transfer onto three-dimensional samples.

Controlled ultraviolet irradiation creates transparent patterns in epoxy-acrylic solder resist layers, eliminating separate ink application steps.

A conductive pad pillar raises the connection height above substrate layers to establish direct electrical coupling with microelectronic devices.

A leveled conductive pad creates a flat surface on through-silicon vias to support reliable wire bonding in semiconductor packages.

A semi-flexible printed circuit board embeds electronic components within a dielectric layer featuring a modulus of elasticity between 1 and 20 GPa.

Vertical microwire structures boost red LED internal quantum efficiency above 10% while maintaining manufacturability at sub-10 μm pixel pitches.

A wiring substrate connection pad uses a composite metal structure to prevent crack propagation.

Dummy electrode patterns with cross-shaped holes reduce insulating layer undulations during curing, enabling stable formation of fine wiring patterns.

Partitioning trenches into subsets with different orientations distributes warping contributions evenly across the semiconductor wafer.

Citric acid and peroxide etchants selectively remove voids from high aspect ratio interconnects, ensuring uniform metal fill without seams.

A pressing apparatus joins semiconductor power module elements via simultaneous sintering and soldering.

Titanium and boron additions in the casting process prevent coarse columnar crystals, stabilizing fastening hole precision and contact area.

A semiconductor alignment mark uses distinct bright and dark areas to produce high optical contrast for precise chip positioning.

Re-entrant profile contacts resolve overlay misalignment issues by forming self-aligned openings through spacer etching, reducing parasitic capacitance.

A light-emitting device package uses bottom through holes to supply encapsulation material in a gravitational direction.

Offset bump centers and vary widths to accommodate thermal expansion differences, preventing electrical connection failures during high-temperature crimping.

An intermediate connection structure with insulating patterns and external pads connects semiconductor chips to external devices.

Segmented passivation layers distribute stress to prevent delamination between polymer planarization and redistribution lines.

Bond-then-dice process removes sacrificial edges via fiducial alignment to eliminate gaps in pixel density, minimizing material scrap rates.

Embedded heat pipes transfer thermal energy from LED modules to fins, eliminating noise and weight penalties of conventional passive cooling.

A three-dimensional metal-insulator-metal capacitor design expands capacitive coupling area through vertically extending sidewall portions.

Soaking treated surfaces in aqueous solution removes residual nitrogen to reduce defectivity at the bonding interface.

A semiconductor device uses a thick metallic member surrounded by resin to shield thin elements from mechanical stress.

Electrically isolating plasma coatings on wafer-level chip-scale packages mitigate current leakage while maintaining electrical isolation and manufacturability.

A single gauge lead frame supports a semiconductor die and heat sink for efficient thermal management.

A wafer-level sensing device uses a temporary cover plate and redistribution layer to simplify fabrication steps.

A lead frame manufacturing method uses a patterned conductive layer as an etch mask to form separate conductive regions on the base material.

Internal grooves in a connecting plate merge separate cooling flows, simplifying routing and reducing interference with surrounding devices.

Protective PM coatings shield InFO dies from wafer stress, preventing micro-cracking and maintaining high production yields.

Movable response suction pads stabilize low-rigidity laminated bodies, preventing deflection deformation and ensuring uniform laser irradiation.

Laser lift-off transfers micro-LEDs from a transparent repair carrier to defect positions on a receiving substrate.

Conductive underfill structure replaces dielectric materials to eliminate signal degradation while maintaining mechanical stress protection.

Through wirings extend along the lower surface of the second wiring layer to resolve unevenness in conductive layers.

An integrated micro-shielding structure surrounds functional circuits within a semiconductor substrate to reduce radio frequency emissions.

A radiator uses stacked tubes with increasing widths to dissipate heat from electronic parts.

A conductive barrier layer contacts thin film resistors outside target areas to simplify manufacturing.

Vertical stacking of packages with embedded metal bumps reduces signal path lengths and power consumption while maintaining high integration density.

Segmented leads with a vertical-walled trench prevent flux overflow and non-stick rejects.

An electrode with an inclined end extends into the insulating base, suppressing gaps between layers that compromise device reliability.

Bolster plate mounts align printed circuit boards to heatsinks using load cells, preventing board bending during peripheral tightening.

Asymmetric land surface areas adjust parasitic capacitance to standardize transmission line characteristics in stacked semiconductor packages.

A connection structure uses double-sided chip-on-film bonding on a flexible printed circuit to reduce planar width.

Circuit board pressing spreads thermal interface material into a thin layer, eliminating complex mask processes to improve thermal conductivity.

Backside passive components integrate directly onto integrated circuit substrates using standard fabrication processes.

A composite etch stop layer defines field plate openings during inter-level dielectric etching, reducing gate-to-drain capacitance burden.

A wafer carrier features a central cavity filled with adhesive to bond the substrate while an outer sidewall contacts the wafer edge.

A temperature sensor circuit generates a variable voltage signal using offsetting MOS transistor resistances to monitor thermal conditions.

A semiconductor processing sheet uses a pressure sensitive adhesive layer containing polymerizable branched polymers to enhance chip removability.

A Ni and Au laminated gate electrode structure with rounded passivation film edges prevents gold diffusion to the semiconductor surface.

Chrome stop-etch layers protect underlying materials during etching, resolving CTE mismatch failures in silicon carbide devices.

Segmented metallization layers in a peripheral metal ring stabilize thermal conductivity, reducing sensitivity to environmental changes.

Segmented insulating layers remove ring patterns to restore signal integrity while stacked wirings create MIM capacitors.

Anodic bonding joins a permanent carrier wafer to the substrate, eliminating temporary handling steps and enabling higher temperature processing.

A pacifier-shaped contact hole structure increases the effective contact area between a metal plug and an epitaxial layer.

Step portions on the chip side surface anchor the encapsulant, preventing delamination under thermal cycles.

Discrete backside openings replace continuous trenches to distribute mechanical stress omnidirectionally during sacrificial layer replacement.

A semiconductor package integrates a grounded lead frame with a conductive coating over molded resin to form an electromagnetic shield.

Extending the under-bump metal pad laterally blocks alpha particles from solder bumps, preventing single-event upsets without adding manufacturing steps.

Merges chip and carrying substrates into an integrated structure using internal conductive plugs, protecting layers from fabrication damage.